From negative to positive magnetoresistance in the intrinsic magnetic topological insulator MnBi2Te4

Zhu, Peng-Fei1,2; Ye, Xing-Guo1,2; Fang, Jing-Zhi3,4; Xiang, Peng-Zhan1,2; Li, Rong-Rong1,2; Xu, Dai-Yao5; Wei, Zhongming3,4; Mei, Jia-Wei6,7; Liu, Song6,7; Yu, Da-Peng6,7; Liao, Zhi-Min1,2,8,9

2020-02-24

10.1103/PhysRevB.101.075425

PHYSICAL REVIEW B   影响因子和分区

2469-9950

2469-9969

We report the magnetotransport properties of MnBi2Te4 thin flakes through gate modulation at low temperatures. Under in-plane magnetic field, a large negative magnetoresistance (MR) maintains up to 10 T, which is related to the suppression of spin scattering when the magnetic order is gradually forced into the ferromagnetic (FM) state. Under perpendicular magnetic field, a steep resistance decrease is observed around similar to 3 T, corresponding to the transition from an antiferromagnetic (AFM) to a canted AFM (CAFM) state. Due to the net Berry curvature, a notable anomalous Hall effect is observed and can be effectively tuned by gate voltages. The enhanced Hall coefficient would emerge under high magnetic fields when the Fermi level is close to the charge neutral point. Moreover, a transition from negative to positive MR is obtained when increasing the magnetic field. A large linear positive MR occurs around similar to 8 T, corresponding to the CAFM-FM transition. The nonsaturated positive MR here may have a similar mechanism to the one in Weyl semimetals, revealing the strong combination between topology and magnetism in MnBi2Te4.

SCI ; EI

英语

其他

National Natural Science Foundation of China[91964201] ; National Natural Science Foundation of China[61825401] ; National Natural Science Foundation of China[11774004]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000515633600005

AMER PHYSICAL SOC

20201508394735

Electric insulators ; Bismuth compounds ; Tellurium compounds ; Magnetoresistance

Magnetism: Basic Concepts and Phenomena:701.2

PHYSICS

Web of Science

1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
2.Peking Univ, Sch Phys, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China
3.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
4.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100083, Peoples R China
5.Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China
6.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
7.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
8.Peking Univ, Beijing Key Lab Quantum Devices, Beijing 100871, Peoples R China
9.Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

Zhu, Peng-Fei,Ye, Xing-Guo,Fang, Jing-Zhi,et al. From negative to positive magnetoresistance in the intrinsic magnetic topological insulator MnBi2Te4[J]. PHYSICAL REVIEW B,2020,101(7).

Zhu, Peng-Fei.,Ye, Xing-Guo.,Fang, Jing-Zhi.,Xiang, Peng-Zhan.,Li, Rong-Rong.,...&Liao, Zhi-Min.(2020).From negative to positive magnetoresistance in the intrinsic magnetic topological insulator MnBi2Te4.PHYSICAL REVIEW B,101(7).

Zhu, Peng-Fei,et al."From negative to positive magnetoresistance in the intrinsic magnetic topological insulator MnBi2Te4".PHYSICAL REVIEW B 101.7(2020).