Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process

Zhang, Linfeng; Deng, Hui

2020

10.1016/j.apsusc.2020.145957

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

An electrochemical etching-enhanced CMP process was proposed to realize the highly efficient and damage-free finishing of GaN. In this process, electrochemical etching was first used to remove the damaged layer induced by grinding or lapping, and CMP was then conducted to flatten the etched surface. The etching rate could reach 1.46 μm/min using NaOH solution as the electrolyte which was highly efficient. It was found that the etching rate and surface roughness can be balanced by adjusting the applied potential. CMP was carried out on an etched GaN sample and the surface roughness was reduced from 69.8 nm to 0.64 nm, and its surface quality was also confirmed to be desirable through photoluminescence. These results demonstrate that the proposed electrochemical etching-enhanced CMP process is highly effective and efficient to obtain a crack-free, damage-free and smooth GaN surface.
© 2020 Elsevier B.V.

Electrochemical etching GaN CMP Subsurface damage Roughness

EI ; SCI

英语

第一 ; 通讯

[JCYJ20180302174311087]

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:000523185200050

Elsevier B.V.

20201008269890

Electrolytes ; Gallium nitride ; III-V semiconductors ; Polishing ; Sodium hydroxide ; Surface roughness

Machining Operations:604.2 ; Electric Batteries and Fuel Cells:702 ; Chemical Agents and Basic Industrial Chemicals:803 ; Chemical Products Generally:804 ; Physical Properties of Gases, Liquids and Solids:931.2

MATERIALS SCIENCE

EV Compendex

Department of Mechanical and Energy Engineering, Southern University of Science and Technology, No. 1088, Xueyuan Road, Shenzhen; Guangdong; 518055, China

Zhang, Linfeng,Deng, Hui. Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process[J]. APPLIED SURFACE SCIENCE,2020,514.

Zhang, Linfeng,&Deng, Hui.(2020).Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process.APPLIED SURFACE SCIENCE,514.

Zhang, Linfeng,et al."Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process".APPLIED SURFACE SCIENCE 514(2020).