Bandgap widening by pressure-induced disorder in two-dimensional lead halide perovskite

Ren, Xiangting1,2; Yan, Xiaozhi1,2; Van Gennep, Derrick3; Cheng, Hu1,2; Wang, Lin4; Li, Yanchun5; Zhao, Yusheng1,2; Wang, Shanmin1,2

2020-03-09

10.1063/1.5143795

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

Tuning the structure of organic-inorganic perovskites by pressure holds great promise for discovering materials with favorable properties. However, most of their high-pressure structures cannot be preserved at ambient conditions and little is known about how to control the properties of these materials recovered from high pressure. Here, we have manipulated the bandgap in a high-pressure-treated 2D organic-inorganic halide perovskite. We find that the bandgap of this compound can be largely altered by pressure-induced lattice disorder. Below 25GPa, the phase transition is reversible and the thus-produced lattice distortion cannot be preserved after pressure release. In contrast, for the sample treated above 25GPa, the structural disorder can be preserved at ambient pressure. Consequently, the bandgap of the sample can be profoundly tuned from 2.98 to 3.46eV. These findings offer an extraordinary example for manipulating the structure and electronic properties of organic-inorganic perovskites by high pressure treatment.

EI ; SCI

英语

NI期刊

第一 ; 通讯

Science Challenging Program[JCKY2016212A501]

Physics

Physics, Applied

WOS:000519952700001

AMER INST PHYSICS

20201208312462

Electronic properties ; Energy gap ; High pressure engineering ; Lead compounds ; Materials properties ; Perovskite

Minerals:482.2

PHYSICS

EV Compendex

1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
2.Southern Univ Sci & Technol, Acad Adv Interdisciplinary Studies, Shenzhen 518055, Guangdong, Peoples R China
3.Harvard Univ, Lyman Lab Phys, Cambridge, MA 02138 USA
4.Yanshan Univ, Ctr High Pressure Sci CHiPS, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
5.Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100049, Peoples R China

Ren, Xiangting,Yan, Xiaozhi,Van Gennep, Derrick,et al. Bandgap widening by pressure-induced disorder in two-dimensional lead halide perovskite[J]. APPLIED PHYSICS LETTERS,2020,116(10).

Ren, Xiangting.,Yan, Xiaozhi.,Van Gennep, Derrick.,Cheng, Hu.,Wang, Lin.,...&Wang, Shanmin.(2020).Bandgap widening by pressure-induced disorder in two-dimensional lead halide perovskite.APPLIED PHYSICS LETTERS,116(10).

Ren, Xiangting,et al."Bandgap widening by pressure-induced disorder in two-dimensional lead halide perovskite".APPLIED PHYSICS LETTERS 116.10(2020).