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题名

Fabrication of MoOx/Mo2C-Layered Hybrid Structures by Direct Thermal Oxidation of Mo2C

作者
通讯作者Tang, Zikang; Gui, Xuchun
发表日期
2020-03-04
DOI
发表期刊
ISSN
1944-8244
EISSN
1944-8252
卷号12期号:9页码:10755-10762
摘要
Two-dimensional (2D) Mo2C, as a new member member of transition metal carbides, has many intriguing properties and potential applications in superconductors and electronic devices. The thermal stability of 2D materials is essential for the performance of the related devices, especially the ones with a vertical heterostructure. However, rare reports have demonstrated the thermal stability of Mo2C and the effects of thermal stability on its performance. Here, we propose a facile and controllable method to directly oxidize Mo2C to MoO, forming a MoOx/Mo2C heterostructure. During the oxidization process, an in situ technique is employed to uncover the transformation and thermal stability of the Mo2C. The chemical vapor deposition Mo2C shows high structural stability below 550 degrees C in Ar or below 350 degrees C in O-2, which demonstrates the high thermal stability and antioxidation of the Mo2C film. The metallic Mo2C is gradually oxidized to semiconducting MoOx as the temperature increases above 350 degrees C. The oxidization rate can be easily controlled by adjusting the oxidation temperature and time. Further, the obtained MoOx/Mo2C vertical hybrid structure shows obvious Schottky junction behaviors, strongly indicating the perfect interfacial contact between the component layers. This work offers a new strategy for the controllable fabrication of high-quality 2D heterostructures.
关键词
相关链接[来源记录]
收录类别
EI ; SCI
语种
英语
学校署名
其他
资助项目
National Natural Science Foundation of China[51772335]
WOS研究方向
Science & Technology - Other Topics ; Materials Science
WOS类目
Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000518702300071
出版者
EI入藏号
20200908249065
EI主题词
Carbides ; Chemical stability ; Chemical vapor deposition ; Fabrication ; Heterojunctions ; Molybdenum oxide ; Thermooxidation ; Transition metals
EI分类号
Metallurgy and Metallography:531 ; Thermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemistry:801 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2
来源库
EV Compendex
引用统计
被引频次[WOS]:30
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/104445
专题创新创业学院
作者单位
1.Univ Macau, Inst Appl Phys & Mat Engn, Taipa 999078, Macao, Peoples R China
2.Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
3.Southern Univ Sci & Technol, Coll Innovat & Entrepreneurship, Shenzhen 518055, Peoples R China
4.Sun Yat Sen Univ, Instrumental Anal & Res Ctr IARC, Guangzhou 510275, Peoples R China
5.South China Normal Univ, Guangdong Prov Key Lab Nanophoton Funct Mat & Dev, Sch Informat & Optoelect Sci & Engn, Guangzhou 510006, Peoples R China
推荐引用方式
GB/T 7714
Yang, Leilei,Chen, Wenjun,Yang, Rongliang,et al. Fabrication of MoOx/Mo2C-Layered Hybrid Structures by Direct Thermal Oxidation of Mo2C[J]. ACS Applied Materials & Interfaces,2020,12(9):10755-10762.
APA
Yang, Leilei.,Chen, Wenjun.,Yang, Rongliang.,Chen, Anqi.,Zhang, Hao.,...&Gui, Xuchun.(2020).Fabrication of MoOx/Mo2C-Layered Hybrid Structures by Direct Thermal Oxidation of Mo2C.ACS Applied Materials & Interfaces,12(9),10755-10762.
MLA
Yang, Leilei,et al."Fabrication of MoOx/Mo2C-Layered Hybrid Structures by Direct Thermal Oxidation of Mo2C".ACS Applied Materials & Interfaces 12.9(2020):10755-10762.
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