Large-Scale Ultrathin 2D Wide-Bandgap BiOBr Nanoflakes for Gate-Controlled Deep-Ultraviolet Phototransistors

Gong, Chuanhui1; Chu, Junwei1; Qian, Shifeng2; Yin, Chujun3,4; Hu, Xiaozong5; Wang, Hongbo1; Wang, Yang1; Ding, Xiang1; Jiang, Shangchi6; Li, Alei7,8; Gong, Youpin7,8; Wang, Xianfu1; Li, Chaobo3,4; Zhai, Tianyou5; Xiong, Jie1

2020-02-19

10.1002/adma.201908242

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

Ternary two-dimensional (2D) semiconductors with controllable wide bandgap, high ultraviolet (UV) absorption coefficient, and critical tuning freedom degree of stoichiometry variation have a great application prospect for UV detection. However, as-reported ternary 2D semiconductors often possess a bandgap below 3.0 eV, which must be further enlarged to achieve comprehensively improved UV, especially deep-UV (DUV), detection capacity. Herein, sub-one-unit-cell 2D monolayer BiOBr nanoflakes (approximate to 0.57 nm) with a large size of 70 mu m are synthesized for high-performance DUV detection due to the large bandgap of 3.69 eV. Phototransistors based on the 2D ultrathin BiOBr nanoflakes deliver remarkable DUV detection performance including ultrahigh photoresponsivity (R-lambda, 12739.13 A W-1), ultrahigh external quantum efficiency (EQE, 6.46 x 10(6)%), and excellent detectivity (D*, 8.37 x 10(12) Jones) at 245 nm with a gate voltage (V-g) of 35 V attributed to the photogating effects. The ultrafast response (tau(rise) = 102 mu s) can be achieved by utilizing photoconduction effects at V-g of -40 V. The combination of photocurrent generation mechanisms for BiOBr-based phototransistors controlled by V-g can pave a way for designing novel 2D optoelectronic materials to achieve optimal device performance.

deep UV phototransistors high gain monolayer BiOBr wide-bandgap semiconductors

SCI ; EI

英语

NI期刊

其他

Natural Science Foundation of Guangdong Province[2018A030310225]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000514353700001

WILEY-V C H VERLAG GMBH

20200908211931

Optoelectronic devices ; Bromine compounds ; Phototransistors ; Binary alloys ; Energy gap

Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3

MATERIALS SCIENCE

Web of Science

1.Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
2.Beijing Inst Technol, Sch Phys, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China
3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
5.Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
6.Metatest Optoelect CO LTD, Technol Dev Ctr, Nanjing 210008, Peoples R China
7.Southern Univ Sci & Technol, Acad Adv Interdisciplinary Studies, Shenzhen 518055, Peoples R China
8.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Gong, Chuanhui,Chu, Junwei,Qian, Shifeng,et al. Large-Scale Ultrathin 2D Wide-Bandgap BiOBr Nanoflakes for Gate-Controlled Deep-Ultraviolet Phototransistors[J]. ADVANCED MATERIALS,2020,32(12).

Gong, Chuanhui.,Chu, Junwei.,Qian, Shifeng.,Yin, Chujun.,Hu, Xiaozong.,...&Xiong, Jie.(2020).Large-Scale Ultrathin 2D Wide-Bandgap BiOBr Nanoflakes for Gate-Controlled Deep-Ultraviolet Phototransistors.ADVANCED MATERIALS,32(12).

Gong, Chuanhui,et al."Large-Scale Ultrathin 2D Wide-Bandgap BiOBr Nanoflakes for Gate-Controlled Deep-Ultraviolet Phototransistors".ADVANCED MATERIALS 32.12(2020).