Band Sharpening and Band Alignment Enable High Quality Factor to Enhance Thermoelectric Performance in n-Type PbS

Xiao, Yu1; Wang, Dongyang1; Zhang, Yang2; Chen, Congrun3; Zhang, Shuxuan3; Wang, Kedong3; Wang, Guangtao4; Pennycook, Stephen J.2; Snyder, G. Jeffrey5; Wu, Haijun2; Zhao, Li-Dong1

2020

10.1021/jacs.0c00306

Journal of the American Chemical Society   影响因子和分区

15205126

1520-5126

Low-cost and earth-abundant PbS-based thermoelectrics are expected to be an alternative for PbTe, and have attracted extensive attentions from thermoelectric community. Herein, a maximum ZT (ZTmax) ≈ 1.3 at 923 K in n-type PbS is obtained through synergistically optimizing quality factor with Sn alloying and PbTe phase incorporation. It is found that Sn alloying in PbS can sharpen the conduction band shape to balance the contradictory interrelationship between carrier mobility and effective mass, accordingly, a peak power factor of ∼19.8 μWcm^-1K^-2 is achieved. Besides band sharpening, Sn alloying can also narrow the band gap of PbS so as to make the conduction band position between Pb0.94Sn0.06S and PbTe well aligned, which can benefit high carrier mobility. Therefore, incorporating the PbTe phase into the Pb0.94Sn0.06S matrix can not only favorably maintain the carrier mobility at ∼150 cm²V^-1s^-1 but also suppress the lattice thermal conductivity to ∼0.61 Wm^-1K^-1 in Pb0.94Sn0.06S-8%PbTe, which contributes to a largely enhanced quality factor. Consequently, an average ZT (ZTave) ≈ 0.72 in 300-923 K is achieved in Pb0.94Sn0.06S-8%PbTe that outperforms other n-type PbS-based thermoelectric materials.
© 2020 American Chemical Society.

SCI ; EI

英语

NI论文 ; ESI高被引

其他

National Basic Research Program of China (973 Program)[2018YFB0703600] ; Natural Science Foundation of Beijing Municipality[JQ18004] ; National Postdoctoral Program for Innovative Talents[BX20190028] ; Higher Education Discipline Innovation Project[B17002] ; China Postdoctoral Science Foundation[2019M660399] ; Shenzhen Peacock Plan[KQTD2016022619565991] ; Ministry of Education - Singapore[R-284-000-212-114] ; [MOE2017-T2-1-129] ; National Science Fund for Distinguished Young Scholars[51925101] ; Henan Normal University[] ; National Natural Science Foundation of China[51772012]

Chemistry

Chemistry, Multidisciplinary

WOS:000517360400043

American Chemical Society

20201008267188

Alloying ; Carrier mobility ; Conduction bands ; Energy gap ; IV-VI semiconductors ; Thermoelectricity ; Tin alloys

Metallurgy:531.1 ; Lead and Alloys:546.1 ; Tin and Alloys:546.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; High Energy Physics:932.1

Web of Science

1.School of Materials Science and Engineering, Beihang University, Beijing; 100191, China
2.Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore; 117575, Singapore
3.Department of Physics, Southern University of Science and Technology, Shenzhen; 518055, China
4.School of Physics, Henan Normal University, Xinxiang; 453007, China
5.Department of Materials Science and Engineering, Northwestern University, Evanston; IL; 60208, United States

Xiao, Yu,Wang, Dongyang,Zhang, Yang,et al. Band Sharpening and Band Alignment Enable High Quality Factor to Enhance Thermoelectric Performance in n-Type PbS[J]. Journal of the American Chemical Society,2020,142(8):4051-4060.

Xiao, Yu.,Wang, Dongyang.,Zhang, Yang.,Chen, Congrun.,Zhang, Shuxuan.,...&Zhao, Li-Dong.(2020).Band Sharpening and Band Alignment Enable High Quality Factor to Enhance Thermoelectric Performance in n-Type PbS.Journal of the American Chemical Society,142(8),4051-4060.

Xiao, Yu,et al."Band Sharpening and Band Alignment Enable High Quality Factor to Enhance Thermoelectric Performance in n-Type PbS".Journal of the American Chemical Society 142.8(2020):4051-4060.