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题名

Layer dependent direct tunneling behaviors through two dimensional titania nanosheets

作者
通讯作者Wang, Liang
发表日期
2020
DOI
发表期刊
ISSN
0927-0256
EISSN
1879-0801
卷号173
摘要
Two dimensional titania nanosheets are drawing increasing attention in academic and industrial community because of their versatile properties. The elucidation of the electron tunneling effect through their intrinsic metal-oxide-metal (MOM) atomic structures is imperative to further advance their applications as atomic dielectrics and memristors. The direct tunneling behaviors through Ti1-δO24δ- nanosheets sandwiched by two metal electrodes are studied by a modified WKB approximation and conformed by ab-initio calculation. Our results show that the tunneling current density depends exponentially on the stack number of dielectric Ti1-δO24δ- layers, decreases by 3–4 orders of magnitude for each layer addition, varying from 106 to 10−8 A/cm2 in one- to five-layer MOM structures. Also, it is highlighted that the localized intercalation charges naturally embedded in chemically-derived Ti1-δO24δ- nanosheets could reduce tunneling current by 3 orders of magnitude and that a thickness threshold of three layers (∼2 nm) exists as to the titania nanosheets not to exceed a gate current density of 1 A/cm2 at 1 V. The present method could be extended to better clarify the electron tunneling behaviors in other two-dimensional gate dielectrics.
© 2019
关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
Fundamental Research Funds for the Central Universities[2018CDGFCL0003] ; National Natural Science Foundation of China[21875245]
WOS研究方向
Materials Science
WOS类目
Materials Science, Multidisciplinary
WOS记录号
WOS:000506172700033
出版者
EI入藏号
20194807748918
EI主题词
Approximation theory ; Calculations ; Dielectric materials ; Gate dielectrics ; Metals ; Nanosheets ; Titanium dioxide
EI分类号
Dielectric Materials:708.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Mathematics:921 ; Numerical Methods:921.6 ; Solid State Physics:933
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:2
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/104613
专题理学院_化学系
作者单位
1.State Key Laboratory of Mechanical Transmission, College of Materials Science and Engineering, Chongqing University, Chongqing; 400044, China
2.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing; 400714, China
3.School of Chemistry, University of Birmingham, Edgbaston, Birmingham; B15 2TT, United Kingdom
4.Department of Chemistry, Southern University of Science and Technology, No. 1088 Xueyuan Blvd, Shenzhen; Guangdong; 518055, China
第一作者单位化学系
推荐引用方式
GB/T 7714
Pu, Yayun,Xie, Xiong,Wang, Liang,et al. Layer dependent direct tunneling behaviors through two dimensional titania nanosheets[J]. COMPUTATIONAL MATERIALS SCIENCE,2020,173.
APA
Pu, Yayun,Xie, Xiong,Wang, Liang,&Shen, Jun.(2020).Layer dependent direct tunneling behaviors through two dimensional titania nanosheets.COMPUTATIONAL MATERIALS SCIENCE,173.
MLA
Pu, Yayun,et al."Layer dependent direct tunneling behaviors through two dimensional titania nanosheets".COMPUTATIONAL MATERIALS SCIENCE 173(2020).
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