Highly Efficient and Stable GABr-Modified Ideal-Bandgap (1.35 eV) Sn/Pb Perovskite Solar Cells Achieve 20.63% Efficiency with a Record Small V-oc Deficit of 0.33 V

Zhou, Xianyong1,2; Zhang, Luozheng1,2,3; Wang, Xingzhu1,2,3; Liu, Chang1,2,3; Chen, Shi1,2,3; Zhang, Meiqing1; Li, Xiangnan1; Yi, Wendi1; Xu, Baomin1,2

2020-02-25

10.1002/adma.201908107

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

1.5-1.6 eV bandgap Pb-based perovskite solar cells (PSCs) with 30-31% theoretical efficiency limit by the Shockley-Queisser model achieve 21-24% power conversion efficiencies (PCEs). However, the best PCEs of reported ideal-bandgap (1.3-1.4 eV) Sn-Pb PSCs with a higher 33% theoretical efficiency limit are <18%, mainly because of their large open-circuit voltage (V-oc) deficits (>0.4 V). Herein, it is found that the addition of guanidinium bromide (GABr) can significantly improve the structural and photoelectric characteristics of ideal-bandgap (approximate to 1.34 eV) Sn-Pb perovskite films. GABr introduced in the perovskite films can efficiently reduce the high defect density caused by Sn2+ oxidation in the perovskite, which is favorable for facilitating hole transport, decreasing charge-carrier recombination, and reducing the V-oc deficit. Therefore, the best PCE of 20.63% with a certificated efficiency of 19.8% is achieved in 1.35 eV PSCs, along with a record small V-oc deficit of 0.33 V, which is the highest PCE among all values reported to date for ideal-bandgap Sn-Pb PSCs. Moreover, the GABr-modified PSCs exhibit significantly improved environmental and thermal stability. This work represents a noteworthy step toward the fabrication of efficient and stable ideal-bandgap PSCs.

guanidinium bromide ideal bandgap mixed tin-lead perovskites molecular doping perovskite solar cells

SCI ; EI

英语

NI期刊

第一 ; 通讯

Shenzhen Science and Technology Innovation Committee[JCYJ20170412154554048]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000515686300001

WILEY-V C H VERLAG GMBH

20200908247720

Perovskite solar cells ; Open circuit voltage ; Tin ; Energy gap ; Lead compounds ; Efficiency ; Semiconductor doping

Minerals:482.2 ; Tin and Alloys:546.2 ; Solar Cells:702.3 ; Semiconducting Materials:712.1 ; Production Engineering:913.1

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Engn Res & Dev Ctr Flexible Solar Cells, Shenzhen 518055, Guangdong, Peoples R China
3.Southern Univ Sci & Technol, SUSTech Acad Adv Interdisciplinary Studies, Shenzhen 518055, Guangdong, Peoples R China

Zhou, Xianyong,Zhang, Luozheng,Wang, Xingzhu,et al. Highly Efficient and Stable GABr-Modified Ideal-Bandgap (1.35 eV) Sn/Pb Perovskite Solar Cells Achieve 20.63% Efficiency with a Record Small V-oc Deficit of 0.33 V[J]. ADVANCED MATERIALS,2020,32(14).

Zhou, Xianyong.,Zhang, Luozheng.,Wang, Xingzhu.,Liu, Chang.,Chen, Shi.,...&Xu, Baomin.(2020).Highly Efficient and Stable GABr-Modified Ideal-Bandgap (1.35 eV) Sn/Pb Perovskite Solar Cells Achieve 20.63% Efficiency with a Record Small V-oc Deficit of 0.33 V.ADVANCED MATERIALS,32(14).

Zhou, Xianyong,et al."Highly Efficient and Stable GABr-Modified Ideal-Bandgap (1.35 eV) Sn/Pb Perovskite Solar Cells Achieve 20.63% Efficiency with a Record Small V-oc Deficit of 0.33 V".ADVANCED MATERIALS 32.14(2020).