A 50 - 90 GHz high efficiency fully integrated 0.13 μm Si Ge power amplifier

Mosalam，Hamed1,2; Rizk，Mohamed3; Kamal，Mohamed4,5; Abdullah，Haytham H.6

10.1109/ICM48031.2019.9021809

2019-12-01

978-1-7281-4059-9

Proceedings of the International Conference on Microelectronics, ICM

2019-December

74-77

15-18 Dec. 2019

Cairo, Egypt

The design and simulation of wideband 50 GHz- 90 GHz power amplifier(PA) using 0.13 μm BiCMOS SiGe:C HBT technology is presented. Stagger tuning technique is utilized to achieve the wideband performance. Source and Loadpull contours are used for improving the output power and power added efficiency. The proposed wideband power amplifier achieves post-layout power gain (S) of 18.5 dB ± 1.8dB; input and output return loss below -7 dB and -8 dB, respectively over the 50 GHz to 90 GHz frequency range. Furthermore, the PA delivers saturated output power of 15 dBm with 19% power added efficiency (PAE) at 77 GHz. Moreover, the proposed SiGe power amplifier consumes only 120 mW from 3.3V voltage supply.

C (HBT) Power Added Efficiency Power amplifier (PA) SiGe

其他

英语

EI

20201308345745

Efficiency ; Broadband amplifiers ; Si-Ge alloys ; Silicon

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Amplifiers:713.1 ; Production Engineering:913.1

2-s2.0-85082132339

Scopus

1.Electronics Research Institute,Egypt
2.Southern University of Science and Technology,Microelectronics Eng. Dept.,China
3.Electronics Research Institute,Department of Nanotechnology,Cairo,Egypt
4.Faculty of Engineering,Fayoum University,Egypt
5.Institute of Electronic Building Blocks and Circuits,Ulm University,Germany
6.Electronics Research Institute,Microwave Eng. Dept.,Cairo,Egypt

Mosalam，Hamed,Rizk，Mohamed,Kamal，Mohamed,et al. A 50 - 90 GHz high efficiency fully integrated 0.13 μm Si Ge power amplifier[C],2019:74-77.