题名 | Aging behaviors of QLED with different structures |
作者 | |
通讯作者 | Chen,Shuming |
DOI | |
发表日期 | 2019
|
ISSN | 0097-966X
|
EISSN | 2168-0159
|
会议录名称 | |
卷号 | 50
|
期号 | Book 2
|
页码 | 656-659
|
摘要 | Quantum dot light-emitting diodes (QLEDs) are recognized as one of the candidates for the development of next generation displays. However the stability issue restricts their industrialization. In this work, we investigated the aging behaviors of QLEDs with different structures. We identified that the lifetime of QLEDs is greatly affected by the hole transport layer (HTL). In addition, we found that devices encapsulated with and without desiccant exhibit different aging behaviors. The use of desiccant improved the stability of the HTL, but the positive aging which could prolong the lifetime of devices was alleviated. On the other hand, device without desiccant exhibited positive aging behavior but the HTL was degraded rapidly. It is concluded that there is a trade-off between positive aging and stability of HTL. |
关键词 | |
学校署名 | 通讯
|
语种 | 英语
|
相关链接 | [Scopus记录] |
收录类别 | |
EI入藏号 | 20200908241691
|
EI主题词 | Driers (materials)
; Economic and social effects
; Hole mobility
; Semiconductor quantum dots
; Organic light emitting diodes (OLED)
|
EI分类号 | Electricity: Basic Concepts and Phenomena:701.1
; Semiconducting Materials:712.1
; Semiconductor Devices and Integrated Circuits:714.2
; Chemical Agents and Basic Industrial Chemicals:803
; Social Sciences:971
|
Scopus记录号 | 2-s2.0-85081153837
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:0
|
成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/106517 |
专题 | 工学院_电子与电气工程系 |
作者单位 | Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Chen,Zinan,Qin,Zhiyuan,Zhou,Xinyi,et al. Aging behaviors of QLED with different structures[C],2019:656-659.
|
条目包含的文件 | 条目无相关文件。 |
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