中文版 | English
题名

Aging behaviors of QLED with different structures

作者
通讯作者Chen,Shuming
DOI
发表日期
2019
ISSN
0097-966X
EISSN
2168-0159
会议录名称
卷号
50
期号
Book 2
页码
656-659
摘要
Quantum dot light-emitting diodes (QLEDs) are recognized as one of the candidates for the development of next generation displays. However the stability issue restricts their industrialization. In this work, we investigated the aging behaviors of QLEDs with different structures. We identified that the lifetime of QLEDs is greatly affected by the hole transport layer (HTL). In addition, we found that devices encapsulated with and without desiccant exhibit different aging behaviors. The use of desiccant improved the stability of the HTL, but the positive aging which could prolong the lifetime of devices was alleviated. On the other hand, device without desiccant exhibited positive aging behavior but the HTL was degraded rapidly. It is concluded that there is a trade-off between positive aging and stability of HTL.
关键词
学校署名
通讯
语种
英语
相关链接[Scopus记录]
收录类别
EI入藏号
20200908241691
EI主题词
Driers (materials) ; Economic and social effects ; Hole mobility ; Semiconductor quantum dots ; Organic light emitting diodes (OLED)
EI分类号
Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Agents and Basic Industrial Chemicals:803 ; Social Sciences:971
Scopus记录号
2-s2.0-85081153837
来源库
Scopus
引用统计
被引频次[WOS]:0
成果类型会议论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/106517
专题工学院_电子与电气工程系
作者单位
Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Chen,Zinan,Qin,Zhiyuan,Zhou,Xinyi,et al. Aging behaviors of QLED with different structures[C],2019:656-659.
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