Electromagnetic-Semiconductor Coupled Solver in Multsicale Simualtions

Quan Chen

10.23919/ACES48530.2019.9060565

2019-08

978-1-7281-4633-1

2019 International Applied Computational Electromagnetics Society Symposium - China (ACES)

1

1-2

8-11 Aug. 2019

Nanjing, China

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

By using the (electric) scalar potential and (magnetic) vector potential as fundamental variables, we rewrite the original Maxwell's equations, and couple the drift-diffusion equation for semiconductors. In order to balance the accuracy and efficiency, we can further combine the quantum mechanics and newly developed electromagnetic-semiconductor coupled solver to study emerging optoelectronic materials. Our multiscale simulation methods are indispensable components of next generation modeling tools for the material design.

electromagnetics quantum mechanics multiscale method real time domain electronic devices

第一

英语

CPCI-S ; EI

National Natural Science Foundation of China[21773246][21403176]

Engineering

Engineering, Electrical & Electronic

WOS:000570405600122

20201808601085

Semiconductor devices ; Maxwell equations ; Finite difference time domain method ; Computational electromagnetics ; Optoelectronic devices ; Semiconductor device models

Electricity and Magnetism:701 ; Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Mathematics:921 ; Calculus:921.2 ; Numerical Methods:921.6 ; Quantum Theory; Quantum Mechanics:931.4

Web of Science

Southern University of Science and Technology,Shenzhen,P. R. China,518055

Quan Chen. Electromagnetic-Semiconductor Coupled Solver in Multsicale Simualtions[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2019:1-2.