Fluorine Substituted Bithiophene Imide-Based n-Type Polymer Semiconductor for High-Performance Organic Thin-Film Transistors and All-Polymer Solar Cells

Sun, Huiliang; Guo, Han; Guo, Xugang

2018-11-23

10.1002/solr.201800265

Solar RRL   影响因子和分区

2367-198X

Bithiophene imide (BTI) is a promising building block for constructing n-type organic semiconductors. The beta-positions of thiophene in BTI offer an exceptional opportunity for further structural expansion and optimization. Herein, a novel fluorinated BTI, s-FBTI2, is designed and successfully synthesized, and its incorporation into a polymer backbone led to the resulting semiconductor s-FBTI2-FT with improved polymer backbone planarity enabled by the intramolecular non-covalent S center dot center dot center dot F interactions and optimized electronic structure attributed to the high electronegativity of F atoms. When applied in organic thin-film transistors (OTFTs), s-FBTI2-FT shows a unipolar n-type transport with a remarkable electron mobility approaching 3.0cm(2) V-1 s(-1), which is >3-fold higher than that of the polymer analogue without F. Moreover, all-polymer solar cells (all-PSCs) with s-FBTI2-FT as the electron acceptor polymer achieve a power conversion efficiency of 6.50% with a remarkably high open-circuit voltage of 1.04 V, which is substantially greater than that of solar cells based on the nonfluorinated analogue acceptor showing negligible photovoltaic performance. The results demonstrate that s-FBTI-FT is one of best-performing n-type polymer semiconductors reported till today in terms of both OTFT and all-PSC performances, and fluorination offers an effective approach for optimizing optoelectronic properties of BTI-based polymers for device performance improvement.

all-polymer solar cells fluorination imide-functionalized n-type polymers organic electronics organic thin-film transistor

EI ; SCI

英语

第一 ; 通讯

NSFC[51573076][21801124] ; Shenzhen Peacock Plan Project[KQTD20140630110339343] ; Shenzhen Basic Research Fund[JCYJ20170817105905899] ; Shenzhen Key Lab funding[ZDSYS201505291525382] ; NRF of Korea[2016M1A2A2940911][2015M1A2A2057506]

Energy & Fuels ; Materials Science

Energy & Fuels ; Materials Science, Multidisciplinary

WOS:000539707100001

WILEY-V C H VERLAG GMBH

20200908235675

Chemical bonds ; Fluorination ; Electronic structure ; Thin films ; Solar power generation ; Open circuit voltage ; Halogenation ; Organic polymers ; Structural optimization ; Thin film circuits ; Thin film transistors ; Fluorine

Solar Power:615.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4 ; Electrochemistry:801.4.1 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Organic Polymers:815.1.1 ; Optimization Techniques:921.5

Web of Science

南方科技大学

Sun, Huiliang,Guo, Han,Guo, Xugang. Fluorine Substituted Bithiophene Imide-Based n-Type Polymer Semiconductor for High-Performance Organic Thin-Film Transistors and All-Polymer Solar Cells[J]. Solar RRL,2018,3(2):1800265.

Sun, Huiliang,Guo, Han,&Guo, Xugang.(2018).Fluorine Substituted Bithiophene Imide-Based n-Type Polymer Semiconductor for High-Performance Organic Thin-Film Transistors and All-Polymer Solar Cells.Solar RRL,3(2),1800265.

Sun, Huiliang,et al."Fluorine Substituted Bithiophene Imide-Based n-Type Polymer Semiconductor for High-Performance Organic Thin-Film Transistors and All-Polymer Solar Cells".Solar RRL 3.2(2018):1800265.