中文版 | English
题名

Intrinsic quantum anomalous Hall phase induced by proximity in the van der Waals heterostructure germanene/Cr2Ge2Te6

作者
通讯作者Wang, Rui
发表日期
2020-04-13
DOI
发表期刊
ISSN
2469-9950
EISSN
2469-9969
卷号101期号:16
摘要
A van der Waals heterostructure combined with intrinsic magnetism and topological orders have recently paved attractive avenues to realize quantum anomalous Hall effects. In this work, using first-principles calculations and effective model analysis, we propose that the robust quantum anomalous Hall states with sizable band gaps emerge in the van der Waals heterostructure of germanene/Cr2Ge2Te6. This heterostructure possesses high thermodynamic stability, thus facilitating its experimental fabrication. Furthermore, we uncover that the proximity effect enhances the coupling between the germanene and Cr2Ge2Te6 layers, inducing the nontrivial band gaps in a wide range from 29 to 72 meV. The chiral edge states inside the band gap, leading to Hall conductance quantized to -e(2)/h, are clearly visible. These findings provide an ideal candidate to detect the quantum anomalous Hall states and realize further applications to nontrivial quantum transport at a high temperature.
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
Fundamental Research Funds for the Central Universities of China[2019CDXYWL0029]
WOS研究方向
Materials Science ; Physics
WOS类目
Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:000525327200001
出版者
EI入藏号
20202008646213
EI主题词
Quantum theory ; Tellurium compounds ; Van der Waals forces ; Chromium compounds ; Germanium compounds ; Energy gap ; Quantum Hall effect ; Germanium alloys ; Quantum chemistry ; High temperature applications
EI分类号
Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Physical Chemistry:801.4 ; Mathematics:921 ; Classical Physics; Quantum Theory; Relativity:931 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:23
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/125672
专题科学与工程计算中心
作者单位
1.Chongqing Univ, Inst Struct & Funct, Chongqing 400044, Peoples R China
2.Chongqing Univ, Dept Phys, Chongqing 400044, Peoples R China
3.Baoji Univ Arts & Sci, Coll Phys & Optoelect Technol, Nonlinear Res Inst, Baoji 721016, Peoples R China
4.Southern Univ Sci & Technol, Ctr Computat Sci & Engn, Shenzhen 518055, Peoples R China
5.Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 400044, Peoples R China
推荐引用方式
GB/T 7714
Zou, Runling,Zhan, Fangyang,Zheng, Baobing,et al. Intrinsic quantum anomalous Hall phase induced by proximity in the van der Waals heterostructure germanene/Cr2Ge2Te6[J]. PHYSICAL REVIEW B,2020,101(16).
APA
Zou, Runling,Zhan, Fangyang,Zheng, Baobing,Wu, Xiaozhi,Fan, Jing,&Wang, Rui.(2020).Intrinsic quantum anomalous Hall phase induced by proximity in the van der Waals heterostructure germanene/Cr2Ge2Te6.PHYSICAL REVIEW B,101(16).
MLA
Zou, Runling,et al."Intrinsic quantum anomalous Hall phase induced by proximity in the van der Waals heterostructure germanene/Cr2Ge2Te6".PHYSICAL REVIEW B 101.16(2020).
条目包含的文件
条目无相关文件。
个性服务
原文链接
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
导出为Excel格式
导出为Csv格式
Altmetrics Score
谷歌学术
谷歌学术中相似的文章
[Zou, Runling]的文章
[Zhan, Fangyang]的文章
[Zheng, Baobing]的文章
百度学术
百度学术中相似的文章
[Zou, Runling]的文章
[Zhan, Fangyang]的文章
[Zheng, Baobing]的文章
必应学术
必应学术中相似的文章
[Zou, Runling]的文章
[Zhan, Fangyang]的文章
[Zheng, Baobing]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
[发表评论/异议/意见]
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。