Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride

Mengyuan Hua1; Xiangbin Cai2; Song Yang2; Zhaofu Zhang2; Zheyang Zheng2; Ning Wang2; Kevin J. Chen2

2019-04

10.1021/acsaelm.8b00102

ACS Applied Electronic Materials   影响因子和分区

2637-6113

We demonstrated the enhanced threshold voltage (V-TH) stability and gate reliability of the enhancement-mode (E-mode) GaN-based MIS-FETs under reversebias stress (i.e., stress at off-state with high drain voltage), which is achieved by converting the conventional GaN (E-g similar to 3.4 eV) channel into a crystalline GaOxN1-x (E-g similar to 4.1 eV) layer. In the MIS-FETs stressed at off-state with a large drain voltage, holes will be generated in the high-electric-field region by impact ionization, and subsequently, degradation of the gate dielectric is caused by the holes passing through the dielectric film. As the valence band offset between the GaOxN1-x and GaN is similar to 0.6 eV, an energy barrier for holes will be formed surrounding the gate, which can prevent holes from flowing to the gate side and therefore reduce the hole-induced gate dielectric degradation. The crystalline gallium oxynitride layer converted from GaN could also be a promising method to improve channel reliability for many GaN-based structures and processes.

crystalline GaON channel GaN enhancement mode MIS-FET reliability

SCI ; ESCI

英语

第一

Shenzhen Science and Technology Innovation Commission[JCYJ20160229205511222] ; Ministry of Science and Technology of the People's Republic of China[2017YFB0403002]

Engineering ; Materials Science

Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary

WOS:000496312700002

AMER CHEMICAL SOC

Web of Science

1.南方科技大学
2.香港科技大学

Mengyuan Hua,Xiangbin Cai,Song Yang,et al. Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride[J]. ACS Applied Electronic Materials,2019,1(5):642-648.

Mengyuan Hua.,Xiangbin Cai.,Song Yang.,Zhaofu Zhang.,Zheyang Zheng.,...&Kevin J. Chen.(2019).Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride.ACS Applied Electronic Materials,1(5),642-648.

Mengyuan Hua,et al."Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride".ACS Applied Electronic Materials 1.5(2019):642-648.