Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET

Mengyuan Hua1; Song Yang2; Jin Wei2; Zheyang Zheng2; Kevin J. Chen2

10.1109/ASICON47005.2019.8983535

2019-10

2019 IEEE 13th International Conference on ASIC (ASICON)

2162-7541

978-1-7281-0736-3

2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON)

1-4

29 Oct.-1 Nov. 2019

Chongqing, China, China

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

Under reverse-bias stress with a high drain voltage, larger negative gate-bias is found to accelerate positive shift in V-TH, suggesting a hole-induced gate dielectric degradation mechanism The hole-induced gate dielectric degradation in the E-mode GaN MIS-FETs could lead to non-recoverable V-TH shifts and devastating time-dependent breakdown. Such a degradation can be effectively suppressed by converting the GaN channel into a crystalline GaOxN1-x, channel in the gated region. The valence band offset between GaOxN1-x and the surrounding GaN creates a hole-blocking ring around the gate dielectric, preventing holes from flowing to the gate dielectric and therefore mitigating the hole-induced degradation.

第一

英语

CPCI-S ; EI

Engineering ; Telecommunications

Engineering, Electrical & Electronic ; Telecommunications

WOS:000541465700109

20201408379002

Gallium nitride ; III-V semiconductors ; Degradation

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2

Web of Science

1.南方科技大学
2.香港科技大学

Mengyuan Hua,Song Yang,Jin Wei,et al. Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET[C]//IEEE. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2019:1-4.