Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure

Ren, Zengyao1; Wang, Mengxi1; Liu, Pengfei1; Liu, Qi2; Wang, Kaiyou3; Jakob, Gehard4; Chen, Jikun1; Meng, Kangkang1; Xu, Xiaoguang1; Miao, Jun1; Jiang, Yong1

2020-04-20

10.1002/aelm.202000102

Advanced Electronic Materials   影响因子和分区

2199-160X

In the field of memory and spin-logical devices, multiferroics have the potentials of low-energy informational operation. A novel memory and logic device in a PbZr0.2Ti0.8O3/Co/Pt (PZT/Co/Pt) multiferroic heterostructure with perpendicular magnetic anisotropy (PMA) is proposed. The PMA of PZT/Co/Pt structure can be modulated via the PZT/Co interface by switching the polarization field in the PZT layer. Moreover, the anomalous Hall voltage (AHV) under downward polarization is about 63% higher than that under upward polarization at 50 K without magnetic field. Interestingly, this AHV modulation is reversible, fast, and nonvolatile. Furthermore, the multiferroic random access memory and logic device operations are demonstrated based on the ferroelectric-modulated AHV, which can lower the operating current density. This nonvolatile manipulation via ferroelectric polarizations will offer a new pathway to improve spintronic and spin-logical applications.

anomalous Hall effect ferroelectric control multiferroic heterostructure perpendicular magnetic anisotropy

SCI ; EI

英语

其他

Beijing Natural Science Foundation Key Program[Z190007]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000527697900001

WILEY

20201708553804

Spin Hall effect ; Computer circuits ; Magnetic anisotropy ; Ferroelectricity ; Polarization ; Ferroelectric RAM ; Magnetic storage

Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Logic Elements:721.2 ; Computer Circuits:721.3 ; Data Storage, Equipment and Techniques:722.1 ; Physical Properties of Gases, Liquids and Solids:931.2

Web of Science

1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing 100083, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
3.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
4.Johannes Gutenberg Univ Mainz, Inst Phys, D-55128 Mainz, Germany

Ren, Zengyao,Wang, Mengxi,Liu, Pengfei,et al. Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure[J]. Advanced Electronic Materials,2020,6(6).

Ren, Zengyao.,Wang, Mengxi.,Liu, Pengfei.,Liu, Qi.,Wang, Kaiyou.,...&Jiang, Yong.(2020).Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure.Advanced Electronic Materials,6(6).

Ren, Zengyao,et al."Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure".Advanced Electronic Materials 6.6(2020).