Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates

Chen, Lei1,2; Zheng, Guifang1; Yao, Gang1; Zhang, Pingjuan1,4; Dai, Shangkai1; Jiang, Yang1; Li, Heqin1; Yu, Binbin5; Ni, Haiyong6; Wei, Shizhong3

2020-04-21

10.1021/acsomega.0c00138

ACS Omega   影响因子和分区

2470-1343

Tremendous success has been achieved in photovoltaic (PV) applications, but PV-generated electricity still cannot compete with traditional power in terms of price. Chemically stable and nontoxic all-oxide solar cells made from earth-abundant resources fulfill the requirements for low-cost manufacturing under ambient conditions and thus are promising as the next-generation approach to solar cells. However, the main obstacles to developing all-oxide solar cells are the spectral absorbers. Besides photovoltaics, novel chemically stable, nontoxic, and earth-abundant narrow-bandgap semiconductors are desired for photochemical applications in photodetectors, photoelectrodes, or photocatalysts. Herein, were report novel lead-free perovskite narrow-bandgap rare-earth semiconductors, YMnO3, HoMnO3, ErMnO3, and YbMnO3, which were identified by screening a family of perovskite rare-earth manganates, RMnO3 (R = Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, and Yb). The sharp edge observed in their absorption spectra indicates the existence of band gaps, further confirmed with laser Raman fluorescence spectra. Good periodic on-off photoelectronic response was observed in 8 of the 12 members (i.e., R = La, Pr, Nd, Sm, Gd, Tb, Dy, and Yb). Among them, YbMnO3 is approved as an n-type semiconductor with a direct band gap near 1.35 eV, whose theoretical Shockley-Queisser efficiency is approximately 33.7% for single-p-n-junction solar cells. This work sheds light on exploring stable oxide semiconductors with a narrow band gap for future applications.

SCI

英语

其他

National Natural Science Foundation[21875058] ; National Natural Science Foundation Joint Fund for Large Scientific Installations[U1332133] ; Project of Science and Technology of Guangdong Province[2017B090901070] ; Open Foundation of National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, China[HKDNM2019015]

Chemistry

Chemistry, Multidisciplinary

WOS:000527748400006

AMER CHEMICAL SOC

Web of Science

1.Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Peoples R China
2.Hefei Univ Technol, Engn Res Ctr High Performance Copper Alloy Mat &, Minist Educ, Hefei 230009, Peoples R China
3.Henan Univ Sci & Technol, Natl Joint Engn Res Ctr Abras Control & Molding M, Luoyang 471003, Peoples R China
4.Anhui Sci & Technol Univ, Coll Elect & Elect Engn, Bengbu 233030, Peoples R China
5.Southern Univ Sci & Technol, SUSTech Acad Adv Interdisciplinary Studies, Shenzhen 518055, Guangdong, Peoples R China
6.Guangdong Acad Sci, Guangdong Res Inst Rare Met, Guangdong Prov Key Lab Rare Earth Dev & Applicat, Guangzhou 510651, Peoples R China

Chen, Lei,Zheng, Guifang,Yao, Gang,et al. Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates[J]. ACS Omega,2020,5(15):8766-8776.

Chen, Lei.,Zheng, Guifang.,Yao, Gang.,Zhang, Pingjuan.,Dai, Shangkai.,...&Wei, Shizhong.(2020).Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates.ACS Omega,5(15),8766-8776.

Chen, Lei,et al."Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates".ACS Omega 5.15(2020):8766-8776.