High efficient polishing of sliced 4H-SiC (0001) by molten KOH etching

Zhang，Yi1,2; Chen，Hongyingnan1; Liu，Dianzi2; Deng，Hui1

2020-09-30

10.1016/j.apsusc.2020.146532

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

Single-crystal silicon carbide (4H-SiC) is a promising third-generation semiconductor material because of its excellent electrical, mechanical and chemical properties. However, the high hardness of 4H-SiC makes it a typical difficult-to-machine material, which greatly restricts the development of SiC devices. In this work, molten KOH etching was first used to polish SiC. The perfect crystal surface and dislocation spots were studied separately. For the perfect crystal surface, a typical isotropic etching polishing behavior was observed. The speed of the polishing process was closely correlated with the temperature. An ultrafast polishing of sliced SiC was achieved, reducing the roughness from 246.5 nm to 16.06 nm within 2 min at 800 °C, and all subsurface damage was removed, as demonstrated by TEM. For the dislocation spot, a relationship between the etch pits angle and temperature was found, making it possible to remove the influence of the dislocation spot by increasing the etch pits angle to approach 180°. This study shows that molten KOH etching could be a very promising SiC polishing method and deserves further research. We anticipate that this approach will be applicable to ultrafast polishing of SiC at the industrial scale.

Dislocation Etch pits Molten KOH etching Polishing Single crystal SiC

SCI ; EI

英语

第一 ; 通讯

research fund for Shenzhen International Cooperation Program[GJHZ20180928155412525] ; Shenzhen Fundamental Research of Free Exploration[JCYJ20180302174311087] ; Shenzhen High-level Innovation and Entrepreneurship Fund from the Science and Technology Innovation Committee of Shenzhen Municipality, Shenzhen, China[KQTD20170810110250357]

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:000541417300004

ELSEVIER

20201908641993

Dislocations (crystals) ; Polishing ; Single crystals ; Wide band gap semiconductors ; Etching ; Potassium hydroxide

Machining Operations:604.2 ; Semiconducting Materials:712.1 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1

MATERIALS SCIENCE

2-s2.0-85084321793

Scopus

1.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,No. 1088, Xueyuan Road,518055,China
2.Engineering,Faculty of Science,University of East Anglia,Norwich,Norwich Research Park,NR4 7TJ,United Kingdom

Zhang，Yi,Chen，Hongyingnan,Liu，Dianzi,et al. High efficient polishing of sliced 4H-SiC (0001) by molten KOH etching[J]. APPLIED SURFACE SCIENCE,2020,525.

Zhang，Yi,Chen，Hongyingnan,Liu，Dianzi,&Deng，Hui.(2020).High efficient polishing of sliced 4H-SiC (0001) by molten KOH etching.APPLIED SURFACE SCIENCE,525.

Zhang，Yi,et al."High efficient polishing of sliced 4H-SiC (0001) by molten KOH etching".APPLIED SURFACE SCIENCE 525(2020).