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题名

Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin-Film Black Phosphorus

作者
通讯作者Chen, Xiaolong; Zhang, Han
发表日期
2020-05-13
DOI
发表期刊
ISSN
2195-1071
卷号8期号:15
摘要
Black phosphorus (BP), a van der Waals (vdW) layered material, has been intensively studied in recent years since the rediscovery of its thin-film form in 2014. It is considered as a promising material for mid-infrared (MIR) photodetection, due to its intrinsic narrow bandgap, tunable band properties, decent optical absorption, high room-temperature mobility, and high compatibility with silicon-based technology. Here, the recent advances in the synthesis techniques, the novel optoelectronic properties, and applications of thin-film BP flake in MIR photodetection are reviewed. Over 17 synthesis techniques of BP films, as well as their merits and drawbacks, are summarized and discussed. The recently discovered strain-, electric-field-, and chemical-doping-induced bandgap tuning effects in BP effectively extend its optical absorption cutoff wavelength into regime with longer wavelength (>4 mu m). In addition, the establishment of BP-based vdW heterostructures paves a new way to design novel high-performance MIR photodetectors. BP MIR photodetectors enabled by various photocurrent generation mechanisms (photoconductive, photogating, and photovoltaic effect) and device configurations (transistor-type, waveguide-coupled, Schottky-junction-type, and heterojunction-type devices) are summarized and compared.
关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
National Natural Science Foundation of China[61904077][61435010][61961136001] ; Guangdong Natural Science Foundation of China[2019A1515010007] ; Science and Technology Innovation Commission of Shenzhen[KQTD2015032416270385][JCYJ20170811093453105][JCYJ20180307164612205][GJHZ20180928160209731] ; Southern University of Science and Technology[Y01236133][Y01236233]
WOS研究方向
Materials Science ; Optics
WOS类目
Materials Science, Multidisciplinary ; Optics
WOS记录号
WOS:000532524000001
出版者
来源库
Web of Science
引用统计
被引频次[WOS]:49
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/138070
专题工学院_电子与电气工程系
作者单位
1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
2.Shenzhen Univ, Inst Microscale Optoelect,Collaborat Innovat Ctr, Minist Educ & Guangdong Prov,Coll Phys & Optoelec, Key Lab Optoelect Devices & Syst,Shenzhen Key Lab, Shenzhen 518060, Peoples R China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Zhang, Le,Wang, Bing,Zhou, Yongheng,et al. Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin-Film Black Phosphorus[J]. Advanced Optical Materials,2020,8(15).
APA
Zhang, Le,Wang, Bing,Zhou, Yongheng,Wang, Cong,Chen, Xiaolong,&Zhang, Han.(2020).Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin-Film Black Phosphorus.Advanced Optical Materials,8(15).
MLA
Zhang, Le,et al."Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin-Film Black Phosphorus".Advanced Optical Materials 8.15(2020).
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