题名 | Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin-Film Black Phosphorus |
作者 | |
通讯作者 | Chen, Xiaolong; Zhang, Han |
发表日期 | 2020-05-13
|
DOI | |
发表期刊 | |
ISSN | 2195-1071
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卷号 | 8期号:15 |
摘要 | Black phosphorus (BP), a van der Waals (vdW) layered material, has been intensively studied in recent years since the rediscovery of its thin-film form in 2014. It is considered as a promising material for mid-infrared (MIR) photodetection, due to its intrinsic narrow bandgap, tunable band properties, decent optical absorption, high room-temperature mobility, and high compatibility with silicon-based technology. Here, the recent advances in the synthesis techniques, the novel optoelectronic properties, and applications of thin-film BP flake in MIR photodetection are reviewed. Over 17 synthesis techniques of BP films, as well as their merits and drawbacks, are summarized and discussed. The recently discovered strain-, electric-field-, and chemical-doping-induced bandgap tuning effects in BP effectively extend its optical absorption cutoff wavelength into regime with longer wavelength (>4 mu m). In addition, the establishment of BP-based vdW heterostructures paves a new way to design novel high-performance MIR photodetectors. BP MIR photodetectors enabled by various photocurrent generation mechanisms (photoconductive, photogating, and photovoltaic effect) and device configurations (transistor-type, waveguide-coupled, Schottky-junction-type, and heterojunction-type devices) are summarized and compared. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | National Natural Science Foundation of China[61904077][61435010][61961136001]
; Guangdong Natural Science Foundation of China[2019A1515010007]
; Science and Technology Innovation Commission of Shenzhen[KQTD2015032416270385][JCYJ20170811093453105][JCYJ20180307164612205][GJHZ20180928160209731]
; Southern University of Science and Technology[Y01236133][Y01236233]
|
WOS研究方向 | Materials Science
; Optics
|
WOS类目 | Materials Science, Multidisciplinary
; Optics
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WOS记录号 | WOS:000532524000001
|
出版者 | |
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:49
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/138070 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 2.Shenzhen Univ, Inst Microscale Optoelect,Collaborat Innovat Ctr, Minist Educ & Guangdong Prov,Coll Phys & Optoelec, Key Lab Optoelect Devices & Syst,Shenzhen Key Lab, Shenzhen 518060, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Zhang, Le,Wang, Bing,Zhou, Yongheng,et al. Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin-Film Black Phosphorus[J]. Advanced Optical Materials,2020,8(15).
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APA |
Zhang, Le,Wang, Bing,Zhou, Yongheng,Wang, Cong,Chen, Xiaolong,&Zhang, Han.(2020).Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin-Film Black Phosphorus.Advanced Optical Materials,8(15).
|
MLA |
Zhang, Le,et al."Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin-Film Black Phosphorus".Advanced Optical Materials 8.15(2020).
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条目包含的文件 | 条目无相关文件。 |
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