Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary

Li, Xujing1,2,3; Yin, Li4; Lai, Zhengxun4; Wu, Mei1,5; Sheng, Yu6; Zhang, Lei2,3; Sun, Yuanwei1,5; Chen, Shulin1; Li, Xiaomei2,3; Zhang, Jingmin1; Li, Yuehui1,5; Liu, Kaihui7,8; Wang, Kaiyou6,9; Yu, Dapeng1,7,10,11; Bai, Xuedong2,3,8; Mi, Wenbo4; Gao, Peng1,5,8

2020-04

10.1093/nsr/nwaa004

National Science Review   影响因子和分区

2095-5138

2053-714X

Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides because of the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8 degrees SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance occurs because of dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.

spin-valve magnetic defects electron microscopy grain boundary

SCI ; EI

英语

其他

National Key R&D Program of China[2016YFA0300804] ; National Equipment Program of China[ZDYZ2015-1] ; National Natural Science Foundation of China[51672007][11974023] ; Key-Area Research and Development Program of Guangdong Province[2018B030327001][2018B010109009]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:000537456300006

OXFORD UNIV PRESS

20210909982586

Atoms ; Defects ; Density functional theory ; High resolution transmission electron microscopy ; Magnetic devices ; Magnetic moments ; Magnetoresistance ; Scanning electron microscopy

Magnetism: Basic Concepts and Phenomena:701.2 ; Optical Devices and Systems:741.3 ; Atomic and Molecular Physics:931.3 ; Materials Science:951

Web of Science

1.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
3.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
4.Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300354, Peoples R China
5.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
6.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
7.Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
8.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
9.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
10.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
11.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Li, Xujing,Yin, Li,Lai, Zhengxun,et al. Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary[J]. National Science Review,2020,7(4):755-762.

Li, Xujing.,Yin, Li.,Lai, Zhengxun.,Wu, Mei.,Sheng, Yu.,...&Gao, Peng.(2020).Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary.National Science Review,7(4),755-762.

Li, Xujing,et al."Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary".National Science Review 7.4(2020):755-762.