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题名

Lineshape characterization of excitons in monolayer WS2by two-dimensional electronic spectroscopy

作者
通讯作者Fleming,Graham R.; Fleming,Graham R.; Fleming,Graham R.
发表日期
2020-06-01
DOI
发表期刊
ISSN
2516-0230
EISSN
2516-0230
卷号2期号:6页码:2333-2338
摘要

The optical properties of monolayer transition metal dichalcogenides (TMDCs), an important family of two-dimensional (2D) semiconductors for optoelectronic applications, are dominated by two excitons A (XA) and B (XB) located at K/K's valleys. The lineshape of the excitons is an indicator of the interaction of the excitons with other particles and also largely determines the performance of TMDC-based optoelectronic devices. In this work, we apply 2D electronic spectroscopy (2DES), which enables separation of the intrinsic homogeneous linewidth and the extrinsic inhomogeneous linewidth, to dissect the lineshape of XA in monolayer WS2. With a home-built broadband optical parametric amplifier, the 2D spectra give the exciton linewidth values for extensive ranges of excitation densities and temperatures, reflecting inter-exciton and exciton-phonon interactions. Meanwhile, the time-domain evolution of the lineshape reveals a similar rate of spectral diffusion to that in quantum wells (QWs) based on III-V semiconductors.

相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
非南科大
资助项目
National Science Foundation[CHE-1362830] ; National Science Foundation Graduate Research Fellowship[DGE-1106400] ; Ministry of Science and Technology, Taiwan[MoST-106-2119-M-007-023-MY3][MoST-105-2112-M-007-032-MY3]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目
Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000543283200046
出版者
EI入藏号
20202608870817
EI主题词
III-V Semiconductors ; Optical Parametric Amplifiers ; Parametric Amplifiers ; Linewidth ; Optoelectronic Devices ; Semiconductor Quantum Wells ; Broadband Amplifiers ; Optical Properties ; Tungsten Compounds ; Monolayers ; Transition Metals
EI分类号
Metallurgy And Metallography:531 ; Semiconducting Materials:712.1 ; Amplifiers:713.1 ; Electronic Components And Tubes:714 ; Semiconductor Devices And Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices And Systems:741.3 ; Atomic And Molecular Physics:931.3 ; Quantum Theory ; Quantum Mechanics:931.4
Scopus记录号
2-s2.0-85086799782
来源库
Scopus
引用统计
被引频次[WOS]:9
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/140343
专题南方科技大学
工学院_机械与能源工程系
作者单位
1.Department of Chemistry,University of California,Berkeley,94720,United States
2.Kavli Energy Nanoscience Institute at Berkeley,Berkeley,94720,United States
3.Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Materials Sciences and Engineering,National Tsing-Hua University,Hsinchu,30013,Taiwan
5.School of Physics and Technology,Wuhan University,Wuhan,430072,China
6.Molecular Biophysics and Integrated Bioimaging Division,Lawrence Berkeley National Laboratory,Berkeley,94720,United States
推荐引用方式
GB/T 7714
Guo,Liang,Guo,Liang,Guo,Liang,et al. Lineshape characterization of excitons in monolayer WS2by two-dimensional electronic spectroscopy[J]. Nanoscale Advances,2020,2(6):2333-2338.
APA
Guo,Liang.,Guo,Liang.,Guo,Liang.,Chen,Chun An.,Zhang,Zhuquan.,...&Fleming,Graham R..(2020).Lineshape characterization of excitons in monolayer WS2by two-dimensional electronic spectroscopy.Nanoscale Advances,2(6),2333-2338.
MLA
Guo,Liang,et al."Lineshape characterization of excitons in monolayer WS2by two-dimensional electronic spectroscopy".Nanoscale Advances 2.6(2020):2333-2338.
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