Thermal annealing effect on the electrical quality of graphene/hexagonal boron nitride heterostructure devices

Pan, Haiyang1,2; Wang, Qiaoming1; Wu, Xiaohua1; Song, Tingting3; Song, Qiuming1; Wang, Jue4

2020-08-28

10.1088/1361-6528/ab92cb

NANOTECHNOLOGY   影响因子和分区

0957-4484

1361-6528

The development of the dry transfer method provides an abundant platform to construct various heterostructures of two-dimensional materials. However, the surface and interface cleanliness are essential to realize high electronical performance of heterostructures devices. Here, we demonstrated thermal annealing effect on the mobility and electrical transport properties of graphene on hexagonal boron nitride heterostructures devices. With different annealing temperature recipes for graphene on hexagonal boron nitride devices, we found annealing temperature at 300 degrees C can clean resist residual and achieve high mobility. Atomic force microscopy results also present a clean surface and small average root mean square roughness as low as 210 pm. Well defined oscillations and plateaus of electrical transport at low magnetic field indicate a high-quality graphene surface.

graphene hexagonal boron nitride heterostructure device thermal annealing

SCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China[11904311]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000543074300001

IOP PUBLISHING LTD

20202808909367

Semiconductor devices ; Nitrides ; Boron nitride ; Annealing ; Graphene devices ; III-V semiconductors

Heat Treatment Processes:537.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
2.Southeast Univ, Dept Phys, Nanjing 211189, Peoples R China
3.China West Normal Univ, Coll Phys & Space Sci, Nanchong 637002, Peoples R China
4.Yancheng Inst Technol, Key Lab Adv Technol Environm Protect Jiangsu Prov, Yancheng 224051, Peoples R China

Pan, Haiyang,Wang, Qiaoming,Wu, Xiaohua,et al. Thermal annealing effect on the electrical quality of graphene/hexagonal boron nitride heterostructure devices[J]. NANOTECHNOLOGY,2020,31(35).

Pan, Haiyang,Wang, Qiaoming,Wu, Xiaohua,Song, Tingting,Song, Qiuming,&Wang, Jue.(2020).Thermal annealing effect on the electrical quality of graphene/hexagonal boron nitride heterostructure devices.NANOTECHNOLOGY,31(35).

Pan, Haiyang,et al."Thermal annealing effect on the electrical quality of graphene/hexagonal boron nitride heterostructure devices".NANOTECHNOLOGY 31.35(2020).