题名 | Bright infra-red quantum dot light-emitting diodes through efficient suppressing of electrons |
作者 | |
通讯作者 | Sun, X. W. |
发表日期 | 2020-05-11
|
DOI | |
发表期刊 | |
ISSN | 0003-6951
|
EISSN | 1077-3118
|
卷号 | 116期号:19 |
摘要 | Colloidal quantum dots are promising materials for near infrared light emitting diodes (NIR QLEDs) owing to the widely tunable wavelength of emitted light, high quantum efficiency, and full integration with solution processing techniques. However, the imbalance of charge carriers in NIR QLEDs greatly limits their performance, which in turn narrows the scope of their application. Here, we propose an approach for improving the brightness and stability of NIR PbS QLEDs through balancing the device current by an ultra-thin inorganic aluminum oxide (Al2O3) electron suppressing layer. This modification resulted in a 7.42 W/sr/m(2) peak radiance at 1.3 mu m wavelength. Moreover, the halide-capped PbS-based NIR QLEDs remained stable under constant current drive for over 144 h. Published under license by AIP Publishing. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI论文
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学校署名 | 通讯
|
资助项目 | National Key Research and Development Program of China[2016YFB0401702]
; National Natural Science Foundation of China[61674074][61405089][61974052]
; Shenzhen Peacock Team Project[KQTD2016030111203005]
; Shenzhen Innovation Project[JCYJ20160301113356947][JCYJ20160301113537474]
|
WOS研究方向 | Physics
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WOS类目 | Physics, Applied
|
WOS记录号 | WOS:000543738300001
|
出版者 | |
EI入藏号 | 20214711187206
|
EI主题词 | Alumina
; Aluminum oxide
; IV-VI semiconductors
; Lead compounds
; Nanocrystals
; Organic light emitting diodes (OLED)
; Quantum efficiency
; Semiconductor quantum dots
; Sols
|
EI分类号 | Semiconducting Materials:712.1
; Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Chemical Products Generally:804
; Inorganic Compounds:804.2
; Quantum Theory; Quantum Mechanics:931.4
; Crystalline Solids:933.1
|
ESI学科分类 | PHYSICS
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:8
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/140671 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Shenzhen Planck Innovat Technol Co Ltd, Shenzhen 518112, Peoples R China 2.Southern Univ Sci & Technol SUSTech, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Guangdong Higher Educ Key Lab Adv Quantum Dot Dis, 1088 Xueyuan Ave, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol SUSTech, Dept Elect & Elect Engn, 1088 Xueyuan Ave, Shenzhen 518055, Peoples R China 4.Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China |
第一作者单位 | 南方科技大学; 电子与电气工程系 |
通讯作者单位 | 南方科技大学; 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Marus, M.,Xia, Y.,Zhong, H.,et al. Bright infra-red quantum dot light-emitting diodes through efficient suppressing of electrons[J]. APPLIED PHYSICS LETTERS,2020,116(19).
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APA |
Marus, M..,Xia, Y..,Zhong, H..,Li, D..,Ding, S..,...&Sun, X. W..(2020).Bright infra-red quantum dot light-emitting diodes through efficient suppressing of electrons.APPLIED PHYSICS LETTERS,116(19).
|
MLA |
Marus, M.,et al."Bright infra-red quantum dot light-emitting diodes through efficient suppressing of electrons".APPLIED PHYSICS LETTERS 116.19(2020).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
5.0005843.pdf(1914KB) | -- | -- | 限制开放 | -- |
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