Recent advances in two-dimensional magnets: physics and devices towards spintronic applications

Ningrum，Vertikasari P.1; Liu，Bowen1; Wang，Wei1; Yin，Yao1; Cao，Yi1; Zha，Chenyang1; Xie，Hongguang1; Jiang，Xiaohong2; Sun，Yan2; Qin，Sichen2; Chen，Xiaolong3; Qin，Tianshi1; Zhu，Chao4; Wang，Lin1; Huang，Wei1; Huang，Wei2

2020-06-19

10.34133/2020/1768918

Research   影响因子和分区

2639-5274

2639-5274

The emergence of low-dimensional nanomaterials has brought revolutionized development of magnetism, as the size effect can significantly influence the spin arrangement. Since the first demonstration of truly two-dimensional magnetic materials (2DMMs) in 2017, a wide variety of magnetic phases and associated properties have been exhibited in these 2DMMs, which offer a new opportunity to manipulate the spin-based devices efficiently in the future. Herein, we focus on the recent progress of 2DMMs and heterostructures in the aspects of their structural characteristics, physical properties, and spintronic applications. Firstly, the microscopy characterization of the spatial arrangement of spins in 2D lattices is reviewed. Afterwards, the optical probes in the light-matter-spin interactions at the 2D scale are discussed. Then, particularly, we systematically summarize the recent work on the electronic and spintronic devices of 2DMMs. In the section of electronic properties, we raise several exciting phenomena in 2DMMs, i.e., long-distance magnon transport, field-effect transistors, varying magnetoresistance behavior, and (quantum) anomalous Hall effect. In the section of spintronic applications, we highlight spintronic devices based on 2DMMs, e.g., spin valves, spin-orbit torque, spin field-effect transistors, spin tunneling field-effect transistors, and spin-filter magnetic tunnel junctions. At last, we also provide our perspectives on the current challenges and future expectations in this field, which may be a helpful guide for theorists and experimentalists who are exploring the optical, electronic, and spintronic properties of 2DMMs.

ESCI ; EI

英语

其他

National Key Research and Development Program of China[2017YFE0131900] ; Major Program of National Natural Science Foundation of China[91833306] ; National Natural Science Foundation of China[61801210][91833302][61904077][61904080] ; Natural Science Foundation of Jiangsu Province[BK20180686][BK20161008][BK20190670]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:000541653000001

AMER ASSOC ADVANCEMENT SCIENCE

20202808917515

Magnetic devices ; Spin Hall effect ; Quantum chemistry ; Magnetic materials ; Quantum Hall effect ; Tunnel junctions ; Field effect transistors

Magnetism: Basic Concepts and Phenomena:701.2 ; Magnetic Materials:708.4 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4 ; Classical Physics; Quantum Theory; Relativity:931

2-s2.0-85087482068

Scopus

1.Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM),Nanjing Tech University (Nanjing Tech),Nanjing,30 South Puzhu Road,211816,China
2.Frontiers Science Center for Flexible Electronics (FSCFE),Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME),Northwestern Polytechnical University (NPU),Xi an,127 West Youyi Road,710072,China
3.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Center for Programmable Materials,School of Materials Science and Engineering,Nanyang Technological University,Singapore,639798,Singapore

Ningrum，Vertikasari P.,Liu，Bowen,Wang，Wei,et al. Recent advances in two-dimensional magnets: physics and devices towards spintronic applications[J]. Research,2020,2020.

Ningrum，Vertikasari P..,Liu，Bowen.,Wang，Wei.,Yin，Yao.,Cao，Yi.,...&Huang，Wei.(2020).Recent advances in two-dimensional magnets: physics and devices towards spintronic applications.Research,2020.

Ningrum，Vertikasari P.,et al."Recent advances in two-dimensional magnets: physics and devices towards spintronic applications".Research 2020(2020).