The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

Sokolovskij, Robert1,2; Zhang, Jian3; Zheng, Hongze1,4,5,6,7; Li, Wenmao1,4,5,6,7; Jiang, Yang1,4,5,6,7; Yang, Gaiying8; Yu, Hongyu1,4,5,6,7; Sarro, Pasqualina M.2; Zhang, Guoqi2

2020-08-15

10.1109/JSEN.2020.2987061

IEEE Sensors Journal   影响因子和分区

2379-9153

ALGaN/GaN HEMT H₂ Sensor Platinum Gate Recess Cyclic Etching Enhancement Mode

SCI ; EI

英语

第一 ; 通讯

20203209007126

Gallium Nitride ; III-V Semiconductors ; Aluminum Gallium Nitride ; Threshold Voltage ; High Electron Mobility Transistors ; Etching

Precious Metals:547.1 ; Electricity: Basic Concepts And Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices And Integrated Circuits:714.2 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2

ENGINEERING

IEEE

1.Southern Univ Sci & Technol SUSTech, Sch Microelect, Shenzhen 518055, Peoples R China
2.Delft Univ Technol, Dept Microelect, NL-2628 CD Delft, Netherlands
3.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
4.Southern Univ Sci & Technol SUSTech, Key Lab Generat Semicond 3, Shenzhen 518055, Peoples R China
5.GaN Device Engn Technol Res Ctr Guangdong, Shenzhen 518055, Peoples R China
6.Shenzhen Inst Widebandgap Semicond, Shenzhen 518100, Peoples R China
7.Minist Educ, Engn Res Ctr Integrated Circuits Next Generat Com, Shenzhen 518055, Peoples R China
8.Southern Univ Sci & Technol SUSTech, Sch Innovat & Entrepreneurship, Shenzhen 518055, Peoples R China

Sokolovskij, Robert,Zhang, Jian,Zheng, Hongze,et al. The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors[J]. IEEE Sensors Journal,2020,20(16):8947-8955.

Sokolovskij, Robert.,Zhang, Jian.,Zheng, Hongze.,Li, Wenmao.,Jiang, Yang.,...&Zhang, Guoqi.(2020).The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors.IEEE Sensors Journal,20(16),8947-8955.

Sokolovskij, Robert,et al."The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors".IEEE Sensors Journal 20.16(2020):8947-8955.