Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga2O3 p-n Heterojunction

Zhang, Jiaye1,2; Han, Shaobo3; Cui, Meiyan2; Xu, Xiangyu2; Li, Weiwei4; Xu, Haiwan2; Jin, Cai1; Gu, Meng3; Chen, Lang1; Zhang, Kelvin H. L.2

2020-02-25

10.1021/acsaelm.9b00704

ACS Applied Electronic Materials   影响因子和分区

2637-6113

Ga2O3 is emerging as an interesting semiconductor for high-power electronics and solar-blind ultraviolet photodetectors because of its ultrawide bandgap and high breakdown field. To fully extend its applications in optoelectronics, it is highly desirable to fabricate a p-n heterojunction. In this work, we report detailed investigations on the epitaxial growth and interface properties of a p-n heterojunction consisting of wide bandgap NiO and beta-phase Ga2O3. We show that the NiO(111) layer can be grown on beta-Ga2O3 ((2) over bar 01) thin films, with an epitaxial relationship of NiO(111)parallel to beta-Ga2O3 ((2) over bar 01) and NiO{110}parallel to beta-Ga2O3 (1 (3) over bar2). The p-n diode exhibits a large current rectification ratio of about 6 orders of magnitude at +/- 2.0 V. A detailed X-ray photoemission spectroscopy study reveals a "staggered" band alignment with valence band offsets of 2.1 eV. More interestingly, a large upward built-in potential of 1.1 eV for beta-Ga2O3 is observed near the interface region. The valence band offset and large built-in potential formed at the heterointerface provide advantageous energetics for the separation and migration of photogenerated excitons, of particular interest for self-powered solar-blind ultraviolet photodetection.

wide bandgap oxide semiconductor Ga2O3 p-n heterojunction photodetector

ESCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China[51972160] ; Science and Technology Research Items of Shenzhen[JCYJ20170412153325679][JCYJ20180504165650580] ; Shenzhen DRC project[[2018]1433]

Engineering ; Materials Science

Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary

WOS:000550584300017

AMER CHEMICAL SOC

20212110406338

Electric rectifiers ; Electronic structure ; Energy gap ; Fabrication ; Heterojunctions ; Nickel oxide ; Photodetectors ; Photoelectron spectroscopy ; Valence bands ; Wide band gap semiconductors

Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2

Web of Science

1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
2.Xiamen Univ, State Key Lab Phys Chem Solid Suifaces, Coll Chem & Chem Engn, Xiamen 361005, Peoples R China
3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
4.Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England

Zhang, Jiaye,Han, Shaobo,Cui, Meiyan,et al. Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga2O3 p-n Heterojunction[J]. ACS Applied Electronic Materials,2020,2(2):456-463.

Zhang, Jiaye.,Han, Shaobo.,Cui, Meiyan.,Xu, Xiangyu.,Li, Weiwei.,...&Zhang, Kelvin H. L..(2020).Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga2O3 p-n Heterojunction.ACS Applied Electronic Materials,2(2),456-463.

Zhang, Jiaye,et al."Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga2O3 p-n Heterojunction".ACS Applied Electronic Materials 2.2(2020):456-463.