A pseudo-metal-free strategy for constructing high performance photoelectrodes

Xiong, Wei1,2; Wang, Haipeng1; Wang, Zhenyu3; Huang, Fei1,4; Dudka, Tatiana5; Lu, Zhouguang3; Zhao, Yanling1; Zhang, Rui-Qin1,6

2020-07-07

10.1039/d0ta01772h

Journal of Materials Chemistry A   影响因子和分区

2050-7488

2050-7496

One of the obvious merits of graphitic carbon nitride (g-CN), which has been considered a promising candidate for photoelectrochemical (PEC) applications, is its metal-free nature; but it suffers from low PEC performance. Metal-containing semiconductors generally exhibit high PEC performance, but their applications are restricted by their high cost. In this study, we put forward for the first time a pseudo-metal-free strategy to combine the advantages of metal-free g-CN and metal-containing semiconductor materials with high PEC performance. A new g-CN precursor of sulfur-rich poly thiourea formaldehyde (PTF) is adopted to react with part of the fluorine-doped tin dioxide (FTO) layer deposited on glass in a closed reaction system at high temperature toin situform g-CN/SnS(2)composite films which are fabricated by using a multiple-step thermal vapor condensation (MSTVC) approach. It is noticeable that metal-containing compounds are not added to the precursor; the metal element is from the FTO layer which is almost indispensable for fabricating photoelectrodes. The photocurrent density of the as-prepared g-CN/SnS(2)composite photoelectrode is as high as 844.6 mu A cm(-2)at 1.23 Vvs.RHE under AM 1.5G illumination without sacrificial agents. This novel pseudo-metal-free strategy opens a new field to stimulate further studies on fabricating composite photoelectrodes.

SCI ; EI

英语

其他

Research Grants Council of the Hong Kong SAR[CityU11334716][CityU11305618] ; Science Technology and Innovation Committee of Shenzhen Municipality[JCYJ20170818104105891] ; National Natural Science Foundation of China[11874081][21671096] ; Shenzhen Peacock Plan[KQTD2016022620054656]

Chemistry ; Energy & Fuels ; Materials Science

Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary

WOS:000544719500054

ROYAL SOC CHEMISTRY

20202808930726

Composite films ; Photoelectrochemical cells ; Sulfur dioxide ; Tin dioxide ; Semiconductor materials

Electric Batteries:702.1 ; Semiconducting Materials:712.1 ; Inorganic Compounds:804.2

Web of Science

1.City Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China
2.Shenzhen Univ, Coll Chem Environm Engn, Key Lab Optoelect Devices & Syst, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518060, Peoples R China
4.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
5.City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong, Peoples R China
6.Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China

Xiong, Wei,Wang, Haipeng,Wang, Zhenyu,et al. A pseudo-metal-free strategy for constructing high performance photoelectrodes[J]. Journal of Materials Chemistry A,2020,8(25):12767-12773.

Xiong, Wei.,Wang, Haipeng.,Wang, Zhenyu.,Huang, Fei.,Dudka, Tatiana.,...&Zhang, Rui-Qin.(2020).A pseudo-metal-free strategy for constructing high performance photoelectrodes.Journal of Materials Chemistry A,8(25),12767-12773.

Xiong, Wei,et al."A pseudo-metal-free strategy for constructing high performance photoelectrodes".Journal of Materials Chemistry A 8.25(2020):12767-12773.