Recessed gate Pt-AlGaN/GaN HEMT H-2 sensor

Sokolovskij, R.1,2,6; Zhang, J.2,3; Zheng, H.1,2; Li, W.1,2; Jiang, Y.1,2; Yang, G.4; Yu, H.1,5; Sarro, P. M.6; Zhang, G. Q.6

2019

1930-0395

2019 IEEE SENSORS

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

This work reports on the fabrication and characterization of recessed gate Pt-AlGaN/GaN HEMT H-2 sensor. The device with partially etched AlGaN layer was obtained by cyclic plasma oxidation and selective chemical oxide etching. The recess depth of 12.3 nm and low RMS roughness were measured by AFM and the Pt/AlGaN interface was examined by STEM. The gate recess resulted in a similar to 1 V positive threshold voltage shift and in the reduction of the drain current due to lower 2DEG density in the gate region, as compared to non-recessed sensors. After the gate recess the sensing response increased from 0.4 % to 2.1 % and from 13.2 % to 42.2 % for 5 ppm and 300 ppm H-2 concentration, respectively. A comparison of transient characteristics revealed a 1.7x faster response and 2x faster recovery time of the recessed-gate Pt-HEMT sensor at 250 ppm H-2 concentration as well as low hysteresis.

AlGaN/GaN H-2 sensor HEMT gate recess digital etching high temperature heterostructure

第一 ; 通讯

英语

CPCI-S

"Research of low cost fabrication of GaN power devices and system integration" research fund[JCYJ20160226192639004]

Engineering ; Remote Sensing

Engineering, Electrical & Electronic ; Remote Sensing

WOS:000534184600305

Web of Science

1.Southern Univ Sci & Technol, SUSTech Sch Microelect, Shenzhen, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China
3.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai, Peoples R China
4.Southern Univ Sci & Technol, Sch Innovat & Entrepreneurship, Shenzhen, Peoples R China
5.Southern Univ Sci & Technol, Key Lab Generat Semicond 3, Shenzhen, Peoples R China
6.Delft Univ Technol, Dept Microelect, Delft, Netherlands

Sokolovskij, R.,Zhang, J.,Zheng, H.,et al. Recessed gate Pt-AlGaN/GaN HEMT H-2 sensor[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2019.