Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder

Wu，Zhenghui1,2; Li，Ning1; Eedugurala，Naresh3; Azoulay，Jason D.3; Leem，Dong Seok4; Ng，Tse Nga1

2020-12-01

10.1038/s41528-020-0069-x

npj Flexible Electronics   影响因子和分区

2397-4621

To achieve high detectivity in infrared detectors, it is critical to reduce the device noise. However, for non-crystalline semiconductors, an essential framework is missing to understand and predict the effects of disorder on the dark current. This report presents experimental and modeling studies on the noise current in exemplar organic bulk heterojunction photodiodes, with 10 donor–acceptor combinations spanning wavelength between 800 and 1600 nm. A significant reduction of the noise and higher detectivity were found in devices using non-fullerene acceptors (NFAs) in comparison to those using fullerene derivatives. The low noise in NFA blends was attributed to a sharp drop off in the distribution of bandtail states, as revealed by variable-temperature density-of-states measurements. Taking disorder into account, we developed a general physical model to explain the dependence of thermal noise on the effective bandgap and bandtail spread. The model provides theoretical targets for the maximum detectivity that can be obtained at different detection wavelengths in inherently disordered infrared photodiodes.

SCI

英语

其他

2-s2.0-85088047116

Scopus

1.Department of Electrical and Computer Engineering,University of California San Diego,La Jolla,9500 Gilman Drive,92093-0407,United States
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,1088 Xueyuan Avenue,518023,China
3.Center for Optoelectronic Materials and Devices,School of Polymer Science and Engineering,University of Southern Mississippi,Hattiesburg,118 College Drive #5050,39406,United States
4.Samsung Advanced Institute of Technology (SAIT),Samsung Electronics,Co.,Ltd.,Gyeonggi-do,130 Samsung-ro, Yeongtong-gu, Suwon-si,443-803,South Korea

Wu，Zhenghui,Li，Ning,Eedugurala，Naresh,et al. Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder[J]. npj Flexible Electronics,2020,4(1).

Wu，Zhenghui,Li，Ning,Eedugurala，Naresh,Azoulay，Jason D.,Leem，Dong Seok,&Ng，Tse Nga.(2020).Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder.npj Flexible Electronics,4(1).

Wu，Zhenghui,et al."Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder".npj Flexible Electronics 4.1(2020).