Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer

Xiao，Yifan1; Liu，Wenjun1; Liu，Chaochao1; Yu，Hongyu2; Liu，Huan3; Han，Jun3; Liu，Weiguo3; Zhang，Wenfeng4; Wu，Xiaohan1; Ding，Shijin1; Liu，Zheng5; Zhang，David Wei1

2020-11-15

10.1016/j.apsusc.2020.147276

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

Beta phase gallium oxide (β-GaO) has attracted wide attention due to its unique material property; however, the lack of p-type doping hinders its practical application. Here, we report a 2H-MoTe/β-GaO (2-01) vertical p-n heterojunction diode via chemical vapor deposition, which exhibited excellent rectification characteristics with a rectifying ratio of 10, and an on-current density of up to 1 mA/cm. The depletion comes from strain-free interface of the 2H-MoTe and β-GaO (2-01) by van der Waals force. The band offsets and the interface element distribution of the heterojunction were investigated by the X-ray photoelectron spectroscopy and transmission electron microscope. The valence and conduction band offsets between the 2H-MoTe and β-GaO were consequently determined to be 0.16 eV and 3.56 eV, with a nested gap (type I) band alignment. Moreover, an abnormal build-in potential was observed in the 2H-MoTe/β-GaO p-n heterojunction diode which could be attributed to the formation of an interfacial layer of MoO. These observations in the 2H-MoTe/β-GaO heterojunction show the great potential in optoelectronic devices.

2H-MoTe2 Band alignment Heterojunction Interface layer X-ray photoelectron spectroscopy β-Ga2O3

SCI ; EI

英语

其他

Guangdong Province Key Research and Development[2019B010128001] ; National Natural Science Foundation of China[61774041] ; National Key Technologies Research and Development Program of China[2017YFB0405600] ; Shanghai Science and Technology Innovation Program[19520711500]

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:000562341900009

ELSEVIER

20203008975960

Optoelectronic devices ; Van der Waals forces ; Chemical vapor deposition ; Semiconductor diodes ; Gallium compounds ; Tungsten compounds ; Molybdenum oxide ; Tellurium compounds ; Transmission electron microscopy ; Heterojunctions ; Photoelectrons ; Electric rectifiers ; Photons

Electromagnetic Waves:711 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

2-s2.0-85088382850

Scopus

1.State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai,200433,China
2.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
3.School of Optoelectronic Engineering,Xian Technological University,Xi'an,710021,China
4.Center for Joining and Electronic Packaging,State Key Laboratory of Material Processing and Die & Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan,430074,China
5.Center for Programmable Materials,School of Materials Science and Engineering,Nanyang Technological University,Singapore,639798,Singapore

Xiao，Yifan,Liu，Wenjun,Liu，Chaochao,et al. Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer[J]. APPLIED SURFACE SCIENCE,2020,530.

Xiao，Yifan.,Liu，Wenjun.,Liu，Chaochao.,Yu，Hongyu.,Liu，Huan.,...&Zhang，David Wei.(2020).Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer.APPLIED SURFACE SCIENCE,530.

Xiao，Yifan,et al."Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer".APPLIED SURFACE SCIENCE 530(2020).