Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method

Wang，J.1,2; Li，T.1; Wang，Q.1; Wang，W.1; Shi，R.1,2; Wang，N.2; Amini，A.3; Cheng，C.1

2020-12-01

10.1016/j.mtadv.2020.100098

Materials Today Advances   影响因子和分区

2590-0498

Two-dimensional (2D) transition metal dichalcogenides (TMDC) have attracted great research interest due to their potential application in electronics, optoelectronics, electrocatalysis, and so on. To satisfy expectations, high-quality materials with designed structures are highly desired through the controlled growth of TMDC. Chemical vapor deposition (CVD) offers facile control in synthesizing 2D TMDC as well as a high degree of freedom for tuning their structures and properties. In this review, we elaborate on recent advances in CVD techniques for synthesizing atomically thin TMDC. The novel techniques for achieving continuous uniform 2D films are provided along with insights into the growth mechanisms. Moreover, approaches toward high-quality materials by growing large single crystals and oriented domains are thoroughly summarized. The strategies for controlling the crystal thickness, phase, and doping condition are also discussed. Finally, we address the challenges in the field and prospective research directions. (C) 2020 The Author(s). Published by Elsevier Ltd.

Two-dimensional materials Transition metal dichalcogenides Vapor phase transport

SCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China[51776094,91963129] ; Basic Research Project of Science and Technology Plan of Shenzhen[JCYJ20180504165655180] ; Guangdong High-level Personnel of Special Support Program-Outstanding young scholar in science and technology innovation[2015TQ01C543] ; Guangdong Natural Science Funds for Distinguished Young Scholars[2015A030306044] ; Hong Kong Research Grants Council[C6021-14E] ; Foundation of Shenzhen Science and Technology Innovation Committee[JCYJ20180302174026262]

Materials Science

Materials Science, Multidisciplinary

WOS:000600683000013

ELSEVIER

20210809942029

Degrees of freedom (mechanics) ; Electrocatalysis ; Quality control ; Semiconductor doping ; Transition metals

Metallurgy and Metallography:531 ; Semiconducting Materials:712.1 ; Chemical Reactions:802.2 ; Quality Assurance and Control:913.3 ; Mechanics:931.1

Web of Science

1.Department of Materials Science and Engineering,Southern University of Science and Technology (SUSTech),Shenzhen,518055,China
2.Department of Physics,The Hong Kong University of Science and Technology (HKUST),Kowloon,Clear Water Bay,999077,Hong Kong
3.Center for Infrastructure Engineering,Western Sydney University,Kingswood,2751,Australia

Wang，J.,Li，T.,Wang，Q.,et al. Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method[J]. Materials Today Advances,2020,8.

Wang，J..,Li，T..,Wang，Q..,Wang，W..,Shi，R..,...&Cheng，C..(2020).Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method.Materials Today Advances,8.

Wang，J.,et al."Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method".Materials Today Advances 8(2020).