中文版 | English
题名

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

作者
通讯作者Zhao, Weiwei; Chen, Zuhuang
发表日期
2021-02-19
DOI
发表期刊
ISSN
0935-9648
EISSN
1521-4095
卷号33
摘要

Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.

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相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
National Natural Science Foundation of China[51972160][51802057][U1932116][51901081][11574091] ; Guangdong Basic and Applied Basic Research Foundation[2020B1515020029] ; Central Military Commission Science and Technology Committee[18-163-00-TS-004-026-01] ; Science and Technology Program of Guangzhou[2019050001] ; Youth Innovation Promotion Association CAS[2016177] ; Shenzhen Science and Technology Program[KQTD20170809110344233] ; Bureau of Industry and Information Technology of Shenzhen through the Graphene Manufacturing Innovation Center[201901161514] ; Science and Technology Research Items of Shenzhen[JCYJ20170412153325679][JCYJ20180504165650580] ; High-Level Special Fund[G02206303][G02206403] ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division[DE-AC02-05-CH11231] ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences[DE-SC-0012375] ; National Science Foundation[OISE-1545907][DMR-1608938][DMR-1708615]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:000560688600001
出版者
EI入藏号
20203409089570
EI主题词
Energy efficiency ; Oxide films ; Domain walls ; Ferroelectricity ; Magnetic domains ; Ferroelectric films ; Magnetic materials ; Topology ; Spin Hall effect
EI分类号
Energy Conservation:525.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Dielectric Materials:708.1 ; Magnetic Materials:708.4 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:98
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/186459
专题理学院_物理系
作者单位
1.Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Peoples R China
2.South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China
3.South China Normal Univ, South China Acad Adv Optoelect, Inst Adv Mat, Guangzhou 510006, Peoples R China
4.South China Normal Univ, Natl Ctr Int Res Green Optoelect, Guangzhou 510006, Peoples R China
5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China
6.Harbin Inst Technol, Flexible Printed Elect Technol Ctr, Shenzhen 518055, Peoples R China
7.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
8.Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
9.Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
推荐引用方式
GB/T 7714
Chen, Shanquan,Yuan, Shuai,Hou, Zhipeng,et al. Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures[J]. ADVANCED MATERIALS,2021,33.
APA
Chen, Shanquan.,Yuan, Shuai.,Hou, Zhipeng.,Tang, Yunlong.,Zhang, Jinping.,...&Chen, Zuhuang.(2021).Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures.ADVANCED MATERIALS,33.
MLA
Chen, Shanquan,et al."Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures".ADVANCED MATERIALS 33(2021).
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