| 题名 | Generating robust two-dimensional hole gas at the interface between boron nitride and diamond |
| 作者 | |
| 通讯作者 | Wu, Kongping; Gan, Liyong |
| 发表日期 | 2020-09
|
| 发表期刊 | |
| ISSN | 0021-4922
|
| EISSN | 1347-4065
|
| 卷号 | 59期号:9 |
| 摘要 | We report on the generation of two-dimensional hole gas (2DHG) with robust stability at the interface of c-BN/diamond upon proper interface engineering without the requirement of hydrogen on diamond. The areal density of the 2DHG is as high as 9.85 x 10(12) cm(-2), and the hole mobility is as high as 924 cm(2)V(-1) s(-1). The intrinsic electron-deficiency nature of the interfacial carbon-boron bonds and the directional charge transfer due to the type-II band alignment are indispensable factors that synergistically lead to the formation of 2DHG. |
| 关键词 | |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 其他
|
| 资助项目 | National Natural Science Foundation of China[11504303][61904071][11704177]
; Science Foundation of Jinling Institute of Technology[jit-rcyj202001]
|
| WOS研究方向 | Physics
|
| WOS类目 | Physics, Applied
|
| WOS记录号 | WOS:000568301200001
|
| 出版者 | |
| EI入藏号 | 20204209350049
|
| EI主题词 | Phase interfaces
; Diamonds
; Gases
; Charge transfer
; Hole mobility
|
| EI分类号 | Gems:482.2.1
; Semiconducting Materials:712.1
; Physical Chemistry:801.4
; Chemical Reactions:802.2
|
| ESI学科分类 | PHYSICS
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：3
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/186609 |
| 专题 | 科学与工程计算中心 |
| 作者单位 | 1.Jinling Inst Technol, Sch Elect & Informat Engn, Nanjing 211169, Jiangsu, Peoples R China 2.Chongqing Univ, Inst Struct & Funct, Chongqing 400030, Peoples R China 3.Chongqing Univ, Dept Phys, Chongqing 400030, Peoples R China 4.Southern Univ Sci & Technol, ChinaCtr Computat Sci & Engn, Shenzhen 518055, Peoples R China 5.Natl Inst Mat Sci NIMS, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan |
| 推荐引用方式 GB/T 7714 |
Wu, Kongping,Gan, Liyong,Zhang, Leng,et al. Generating robust two-dimensional hole gas at the interface between boron nitride and diamond[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2020,59(9).
|
| APA |
Wu, Kongping.,Gan, Liyong.,Zhang, Leng.,Zhang, Pengzhan.,Liu, Fei.,...&Liao, Meiyong.(2020).Generating robust two-dimensional hole gas at the interface between boron nitride and diamond.JAPANESE JOURNAL OF APPLIED PHYSICS,59(9).
|
| MLA |
Wu, Kongping,et al."Generating robust two-dimensional hole gas at the interface between boron nitride and diamond".JAPANESE JOURNAL OF APPLIED PHYSICS 59.9(2020).
|
| 条目包含的文件 | 条目无相关文件。 | |||||
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