题名 | Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application |
作者 | |
通讯作者 | Hu, Chengzhi; Yang, Mingshu |
发表日期 | 2020-09-28
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DOI | |
发表期刊 | |
ISSN | 2056-6646
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EISSN | 2056-6646
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卷号 | 4期号:11 |
摘要 | Transition metal orthovanadates are emerging 2D materials for promising electrochemical energy storage applications. Facile hydrothermal method for nanocrystalline indium vanadate (InVO4) semiconducting materials' fabrication is economical because of its direct chemical synthesis. X-ray diffraction studies, field emission scanning electron microscope (SEM) images, transmission electron microscopy (TEM), and photoelectron X-ray spectrum are used to describe the semiconductor materials as synthesized. InVO(4)microspheres have attracted a lot of attention in the energy and environmental sector. These microsphere-derived semiconductor materials are recognized to offer the advantages of their large surface area, tunable pore sizes, enhanced light absorption, efficient carrier (electron-hole) separation, superior electronic and optical behavior, and high durability. From the results of SEM and TEM, InVO(4)shows a microsphere construction with a mixture of nanosized particles. Diffuse reflectance UV-visible measurements are used to determine the bandgap, and it is found to be 2.1 eV for InVO4. The electrochemical analysis reveals a superior performance of the pseudocapacitor with hydrothermally derived microspheres of InVO4. Alongside an improved pseudocapacity, developed after 4000 cycles, it has excellent cycling stability with a retention of approximate to 94% of its original specific capacitance efficiency. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 通讯
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资助项目 | CAS President's International Fellowship Initiative[2016PM045]
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WOS研究方向 | Science & Technology - Other Topics
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WOS类目 | Multidisciplinary Sciences
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WOS记录号 | WOS:000572941100001
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出版者 | |
ESI学科分类 | MULTIDISCIPLINARY
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:10
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/186653 |
专题 | 工学院_机械与能源工程系 工学院_电子与电气工程系 |
作者单位 | 1.Chinese Acad Sci, Inst Chem, Key Lab Engn Plast, Beijing Natl Lab Mol Sci, Zhongguancun North First St 2, Beijing 100190, Peoples R China 2.Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518055, Guangdong, Peoples R China 3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China 4.Jiangxi Univ Sci & Technol, Coll Rare Earths CORE, Engn Res Ctr Hydrogen Energy Mat & Devices, Ganzhou 341000, Jiangxi, Peoples R China |
第一作者单位 | 机械与能源工程系 |
通讯作者单位 | 机械与能源工程系 |
推荐引用方式 GB/T 7714 |
Subramanian, Balachandran,Veerappan, Manimuthu,Rajan, Karthikeyan,et al. Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application[J]. GLOBAL CHALLENGES,2020,4(11).
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APA |
Subramanian, Balachandran.,Veerappan, Manimuthu.,Rajan, Karthikeyan.,Chen, Zheming.,Hu, Chengzhi.,...&Yang, Mingshu.(2020).Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application.GLOBAL CHALLENGES,4(11).
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MLA |
Subramanian, Balachandran,et al."Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application".GLOBAL CHALLENGES 4.11(2020).
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