Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes-Thinning the Quantum Barriers to Manage the Current Spreading

Chang, Le1; Yeh, Yen-Wei2,3; Hang, Sheng1; Tian, Kangkai1; Kou, Jianquan1; Bi, Wengang1; Zhang, Yonghui1; Zhang, Zi-Hui1; Liu, Zhaojun4; Kuo, Hao-Chung2,3

2020-08-06

10.1186/s11671-020-03372-3

Nanoscale Research Letters   影响因子和分区

1931-7573

1556-276X

Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (mu LEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be correspondingly enhanced, which therefore further limits the carrier injection and the external quantum efficiency (EQE). In this work, we suggest reducing the nonradiative recombination rate at sidewall defects by managing the current spreading effect. For that purpose, we properly reduce the vertical resistivity by decreasing the quantum barrier thickness so that the current is less horizontally spreaded to sidewall defects. As a result, much fewer carriers are consumed in the way of surface nonradiative recombination. Our calculated results demonstrate that the suppressed surface nonradiative recombination can better favor the hole injection efficiency. We also fabricate the mu LEDs that are grown on Si substrates, and the measured results are consistent with the numerical calculations, such that the EQE for the proposed mu LEDs with properly thin quantum barriers can be enhanced, thanks to the less current spreading effect and the decreased surface nonradiative recombination.

Micro-LED Sidewall defects Nonradiative recombination Current spreading Hole injection IQE

SCI ; EI

英语

通讯

Natural Science Foundation of Hebei Province[F2018202080]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000561061500001

SPRINGER

20203209022666

III-V semiconductors ; Charge injection ; Quantum efficiency

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Quantum Theory; Quantum Mechanics:931.4

Web of Science

1.Hebei Univ Technol, Key Lab Elect Mat & Devices Tianjin, Sch Elect & Informat Engn, 5340 Xiping Rd, Tianjin 300401, Peoples R China
2.Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
3.Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
4.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Chang, Le,Yeh, Yen-Wei,Hang, Sheng,et al. Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes-Thinning the Quantum Barriers to Manage the Current Spreading[J]. Nanoscale Research Letters,2020,15(1).

Chang, Le.,Yeh, Yen-Wei.,Hang, Sheng.,Tian, Kangkai.,Kou, Jianquan.,...&Kuo, Hao-Chung.(2020).Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes-Thinning the Quantum Barriers to Manage the Current Spreading.Nanoscale Research Letters,15(1).

Chang, Le,et al."Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes-Thinning the Quantum Barriers to Manage the Current Spreading".Nanoscale Research Letters 15.1(2020).