南方科技大学知识苑(SUSTech KC): High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays

题名	High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays
作者	Liu, Yibo 1; Zhang, Ke 1; Hyun, Byung-Ryool 2; Kwok, Hoi Sing 1; Liu, Zhaojun2
通讯作者	Liu, Zhaojun
发表日期	2020-09
DOI	10.1109/LED.2020.3014435
发表期刊	IEEE Electron Device Letters 影响因子和分区
ISSN	1558-0563
卷号	41 期号:9页码:1380-1383
关键词	High-brightness green Micro-LEDs blue shift secondary peak effect
相关链接	[IEEE记录]
收录类别	SCI ; EI
学校署名	通讯
EI入藏号	20203809204907
EI主题词	Mass transfer ; III-V semiconductors ; Electroluminescence ; Luminance
EI分类号	Mass Transfer:641.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light, Optics and Optical Devices:741
ESI学科分类	ENGINEERING
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9159679
引用统计	被引频次[WOS]：38
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/186888
专题	工学院_电子与电气工程系
作者单位	1.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China; 2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
通讯作者单位	电子与电气工程系
推荐引用方式 GB/T 7714	Liu, Yibo,Zhang, Ke,Hyun, Byung-Ryool,et al. High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays[J]. IEEE Electron Device Letters,2020,41(9):1380-1383.
APA	Liu, Yibo,Zhang, Ke,Hyun, Byung-Ryool,Kwok, Hoi Sing,&Liu, Zhaojun.(2020).High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays.IEEE Electron Device Letters,41(9),1380-1383.
MLA	Liu, Yibo,et al."High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays".IEEE Electron Device Letters 41.9(2020):1380-1383.