Impact of the resistive switching effects in ZnMgO electron transport layer on the aging characteristics of quantum dot light-emitting diodes

Ding, Shihao1,2,3; Wu, Zhenghui1,2; Qu, Xiangwei1,2; Tang, Haodong1,2; Wang, Kai1,2; Xu, Bing1,2,3; Sun, Xiao Wei1,2,3

2020-08-31

10.1063/5.0019140

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

The phenomenon of positive aging has been frequently reported in quantum dot light-emitting diodes (QLEDs). However, the root cause for this phenomenon remains illusive. On the other hand, the commonly used electron transport material in QLEDs, ZnMgO, has been extensively studied as a resistive switching material. In this work, we found that the ZnMgO nano-particle film used in QLEDs showed a clear resistive switching effect. It is, thus, reasonable to relate the resistive switching mechanism of ZnMgO to the aging characteristics of QLED devices. We found that during the first stage of QLED aging, the efficiency of the QLED was improved due to the migration of off-lattice ions and formation of conductive filaments in the ZnMgO layer. Subsequently, as active oxygen ions migrated to the interface between quantum dots and ZnMgO, the barrier for electron transport increased due to the oxidation of quantum dots. At the same time, the conductive filaments were gradually fused due to the continuous external electric field. As a result, the performance of QLED devices continuously deteriorated.

Efficiency

SCI ; EI

英语

NI论文

第一

Ministry of Science and Technology of China[2016YFB0401702][2017YFE0120400] ; National Natural Science Foundation of China[61674074][61875082][61405089] ; Guangdong Province's Key R&D Program: Micro-LED Display and Ultra-high Brightness Micro-Display Technology[2019B010925001] ; Environmentally Friendly Quantum Dots Luminescent Materials[2019B010924001] ; Guangdong Basic and Applied Basic Research Foundation[2019A1515110437] ; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting[2017KSYS007] ; Guangdong Youth Innovative Talents Project[2018KQNCX228] ; Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting[ZDSYS201707281632549] ; Shenzhen Peacock Team Project[KQTD2016030111203005] ; Shenzhen Innovation Project[JSGG20170823160757004][JCYJ20180305180629908]

Physics

Physics, Applied

WOS:000568860400001

AMER INST PHYSICS

20203809184630

Electron transport properties ; Semiconductor quantum dots ; Zinc compounds ; Nanocrystals ; Quantum chemistry ; Switching ; Electric fields ; Organic light emitting diodes (OLED)

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Crystalline Solids:933.1

PHYSICS

Web of Science

1.Southern Univ Sci & Technol, Guangdong Univ Key Lab Adv Quantum Dot Displays &, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Shenzhen 518055, Peoples R China;
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China;
3.Shenzhen Planck Innovat Technol Co Ltd, 18 Huancheng South Rd, Shenzhen 518129, Peoples R China

Ding, Shihao,Wu, Zhenghui,Qu, Xiangwei,et al. Impact of the resistive switching effects in ZnMgO electron transport layer on the aging characteristics of quantum dot light-emitting diodes[J]. APPLIED PHYSICS LETTERS,2020,117(9).

Ding, Shihao.,Wu, Zhenghui.,Qu, Xiangwei.,Tang, Haodong.,Wang, Kai.,...&Sun, Xiao Wei.(2020).Impact of the resistive switching effects in ZnMgO electron transport layer on the aging characteristics of quantum dot light-emitting diodes.APPLIED PHYSICS LETTERS,117(9).

Ding, Shihao,et al."Impact of the resistive switching effects in ZnMgO electron transport layer on the aging characteristics of quantum dot light-emitting diodes".APPLIED PHYSICS LETTERS 117.9(2020).