Identification of excess charge carriers in InP-based quantum-dot light-emitting diodes

Su, Qiang1,2,3; Zhang, Heng1,2,3; Chen, Shuming1,2,3

2020-08-03

10.1063/5.0019790

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

InP-based quantum-dot light-emitting diodes (QLEDs) have recently attracted a lot of attention from academia and industry owing to their environment-friendly characteristics and have been hotly investigated as promising alternatives to toxic CdSe-based QLEDs. Although the performances of InP-QLEDs have been rapidly improved in recent years, the device mechanisms are not completely clear and there are still debates in the community regarding the details of excess charge carriers, which are expected to affect the charge balance and the efficiency of the devices. In this work, by studying the influence of charge injection on the efficiency and the charge carrier dynamics, we identify that holes are over-injected in InP-QLEDs, which is different from that in CdSe-QLEDs. By enhancing the injection of electrons and/or blocking the injection of holes, the population of excess holes is reduced, consequently enabling red and green InP-QLEDs with high external quantum efficiencies of 10.78% and 7.56%, respectively. Our work provides a practical way to identify the type of excess carrier and can serve as a useful guide for the optimization of charge balance in InP-QLEDs.

HIGHLY-EFFICIENT

SCI ; EI

英语

NI论文

第一 ; 通讯

National Natural Science Foundation of China[61775090] ; Guangdong Natural Science Funds for Distinguished Young Scholars[2016A030306017] ; Guangdong Special Funds for Science and Technology Development[2017A050506001]

Physics

Physics, Applied

WOS:000560768100001

AMER INST PHYSICS

20203509104596

Semiconductor quantum dots ; Nanocrystals ; Organic light emitting diodes (OLED) ; III-V semiconductors ; Quantum efficiency ; Cadmium compounds ; Charge carriers ; Semiconducting indium phosphide ; II-VI semiconductors

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Quantum Theory; Quantum Mechanics:931.4 ; Crystalline Solids:933.1

PHYSICS

Web of Science

1.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Guangdong Univ Key Lab Adv Quantum Dot Displays &, Shenzhen 518055, Peoples R China;
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China;
3.Southern Univ Sci & Technol, Minist Educ, Key Lab Energy Convers & Storage Technol, Shenzhen 518055, Peoples R China

Su, Qiang,Zhang, Heng,Chen, Shuming. Identification of excess charge carriers in InP-based quantum-dot light-emitting diodes[J]. APPLIED PHYSICS LETTERS,2020,117(5).

Su, Qiang,Zhang, Heng,&Chen, Shuming.(2020).Identification of excess charge carriers in InP-based quantum-dot light-emitting diodes.APPLIED PHYSICS LETTERS,117(5).

Su, Qiang,et al."Identification of excess charge carriers in InP-based quantum-dot light-emitting diodes".APPLIED PHYSICS LETTERS 117.5(2020).