Fabrication of a thermostable Ga-face GaN template on a molybdenum substrate via layer transfer

Gallium nitride (GaN) films on high-thermal-conductivity substrates have attracted considerable attention for their applications in high-power light-emitting diodes and electronic devices. Herein, a 2-inch 8-μm-thick thermostable GaN/Mo template with Ga-face was fabricated via two consecutive layer transfer technique. The full-widths at half-maximum for the x-ray rocking curves of GaN (002) and (102) plane were 314 and 325 arcsec, respectively. Atomic force microscopy revealed that the surface had step-and-terrace structures with a root-mean-square value of 0.397 nm. Five periods of In0.15GaN/GaN multiple-quantum-wells and Mg-doped p-type GaN layers were regrown on the GaN/Mo template, which exhibited blue light emission without distinct degradation.;Gallium nitride (GaN) films on high-thermal-conductivity substrates have attracted considerable attention for their applications in high-power light-emitting diodes and electronic devices. Herein, a 2-inch 8-μm-thick thermostable GaN/Mo template with Ga-face was fabricated via two consecutive layer transfer technique. The full-widths at half-maximum for the x-ray rocking curves of GaN (002) and (102) plane were 314 and 325 arcsec, respectively. Atomic force microscopy revealed that the surface had step-and-terrace structures with a root-mean-square value of 0.397 nm. Five periods of In0.15GaN/GaN multiple-quantum-wells and Mg-doped p-type GaN layers were regrown on the GaN/Mo template, which exhibited blue light emission without distinct degradation.