题名 | Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4 |
作者 | |
通讯作者 | Zhao,Yue; Liu,Qihang; Lin,Junhao |
共同第一作者 | Hou,Fuchen; Yao,Qiushi |
发表日期 | 2020-09-22
|
DOI | |
发表期刊 | |
ISSN | 1936-0851
|
EISSN | 1936-086X
|
卷号 | 14期号:9页码:11262-11272 |
摘要 | MnBi2Te4 is an antiferromagnetic topological insulator that has stimulated intense interest due to its exotic quantum phenomena and promising device applications. The surface structure is a determinant factor to understand the magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here we discovered a surface collapse and reconstruction of few-layer MnBi2Te4 exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as a Mn-doped Bi2Te3 quintuple layer and a MnxBiyTe double layer with a clear van der Waals gap in between. Combined with first-principles calculations, such surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and the tellurium vacancy in the exfoliated surface, which is further supported by in situ annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi2Te4 and provide an insightful perspective on the surface-related quantum measurements in MnBi2Te4 few-layer devices. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
重要成果 | NI期刊
|
学校署名 | 第一
; 共同第一
; 通讯
|
资助项目 | National Natural Science Foundation of China[11974156][11874195][11674149][11674150]
; Guangdong International Science Collaboration Project[2019A050510001][2017ZT07C062]
; National Key Research and Development Program[2019YFA0704901]
; Guangdong Provincial Key Laboratory of Computational Science and Material Design[2019B030301001]
; Key-Area Research and Development Program of Guangdong Province[2019B010931001]
; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C062][2016ZT06D348][2019ZT08C044]
; Highlight Project of the College of Science, SUSTech.[PHYS-HL-20201]
; Science, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20190902092905285][KQTD20190929173815000]
|
WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
|
WOS类目 | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
|
WOS记录号 | WOS:000576958900017
|
出版者 | |
EI入藏号 | 20204309399464
|
EI主题词 | Tellurium
; Manganese compounds
; Surface reconstruction
; Electric insulators
; Bismuth compounds
; Tellurium compounds
; Binary alloys
; Calculations
|
EI分类号 | Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3
; Physical Chemistry:801.4
; Mathematics:921
; Atomic and Molecular Physics:931.3
|
Scopus记录号 | 2-s2.0-85091568756
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:52
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/187899 |
专题 | 理学院_物理系 量子科学与工程研究院 |
作者单位 | 1.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China 2.Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,518055,China 3.Department of Physics,University of Hong Kong,Hong Kong,China 4.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China 5.Guangdong Provincial Key Laboratory for Computational Science and Material Design,Southern University of Science and Technology,Shenzhen,518055,China |
第一作者单位 | 物理系; 南方科技大学 |
通讯作者单位 | 物理系; 量子科学与工程研究院; 南方科技大学 |
第一作者的第一单位 | 物理系 |
推荐引用方式 GB/T 7714 |
Hou,Fuchen,Yao,Qiushi,Zhou,Chun Sheng,et al. Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4[J]. ACS Nano,2020,14(9):11262-11272.
|
APA |
Hou,Fuchen.,Yao,Qiushi.,Zhou,Chun Sheng.,Ma,Xiao Ming.,Han,Mengjiao.,...&Lin,Junhao.(2020).Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4.ACS Nano,14(9),11262-11272.
|
MLA |
Hou,Fuchen,et al."Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4".ACS Nano 14.9(2020):11262-11272.
|
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
2020_第四作者acsnano.0c0(10100KB) | -- | -- | 限制开放 | -- |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论