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题名

Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4

作者
通讯作者Zhao,Yue; Liu,Qihang; Lin,Junhao
共同第一作者Hou,Fuchen; Yao,Qiushi
发表日期
2020-09-22
DOI
发表期刊
ISSN
1936-0851
EISSN
1936-086X
卷号14期号:9页码:11262-11272
摘要

MnBi2Te4 is an antiferromagnetic topological insulator that has stimulated intense interest due to its exotic quantum phenomena and promising device applications. The surface structure is a determinant factor to understand the magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here we discovered a surface collapse and reconstruction of few-layer MnBi2Te4 exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as a Mn-doped Bi2Te3 quintuple layer and a MnxBiyTe double layer with a clear van der Waals gap in between. Combined with first-principles calculations, such surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and the tellurium vacancy in the exfoliated surface, which is further supported by in situ annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi2Te4 and provide an insightful perspective on the surface-related quantum measurements in MnBi2Te4 few-layer devices.

关键词
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI期刊
学校署名
第一 ; 共同第一 ; 通讯
资助项目
National Natural Science Foundation of China[11974156][11874195][11674149][11674150] ; Guangdong International Science Collaboration Project[2019A050510001][2017ZT07C062] ; National Key Research and Development Program[2019YFA0704901] ; Guangdong Provincial Key Laboratory of Computational Science and Material Design[2019B030301001] ; Key-Area Research and Development Program of Guangdong Province[2019B010931001] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C062][2016ZT06D348][2019ZT08C044] ; Highlight Project of the College of Science, SUSTech.[PHYS-HL-20201] ; Science, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20190902092905285][KQTD20190929173815000]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000576958900017
出版者
EI入藏号
20204309399464
EI主题词
Tellurium ; Manganese compounds ; Surface reconstruction ; Electric insulators ; Bismuth compounds ; Tellurium compounds ; Binary alloys ; Calculations
EI分类号
Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Physical Chemistry:801.4 ; Mathematics:921 ; Atomic and Molecular Physics:931.3
Scopus记录号
2-s2.0-85091568756
来源库
Scopus
引用统计
被引频次[WOS]:52
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/187899
专题理学院_物理系
量子科学与工程研究院
作者单位
1.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
2.Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,518055,China
3.Department of Physics,University of Hong Kong,Hong Kong,China
4.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
5.Guangdong Provincial Key Laboratory for Computational Science and Material Design,Southern University of Science and Technology,Shenzhen,518055,China
第一作者单位物理系;  南方科技大学
通讯作者单位物理系;  量子科学与工程研究院;  南方科技大学
第一作者的第一单位物理系
推荐引用方式
GB/T 7714
Hou,Fuchen,Yao,Qiushi,Zhou,Chun Sheng,et al. Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4[J]. ACS Nano,2020,14(9):11262-11272.
APA
Hou,Fuchen.,Yao,Qiushi.,Zhou,Chun Sheng.,Ma,Xiao Ming.,Han,Mengjiao.,...&Lin,Junhao.(2020).Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4.ACS Nano,14(9),11262-11272.
MLA
Hou,Fuchen,et al."Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4".ACS Nano 14.9(2020):11262-11272.
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