Surface-Modified Ultrathin InSe Nanosheets with Enhanced Stability and Photoluminescence for High-Performance Optoelectronics

Hao，Qiaoyan1; Liu，Jidong1; Wang，Gang2; Chen，Jiewei3; Gan，Haibo1; Zhu，Jiaqi1; Ke，Yuxuan1; Chai，Yang3; Lin，Junhao2; Zhang，Wenjing1

2020-09-22

10.1021/acsnano.0c03556

ACS Nano   影响因子和分区

1936-0851

1936-086X

Indium selenide (InSe) has become a research hotspot because of its favorable carrier mobility and thickness-tunable band gap, showing great application potential in high-performance optoelectronic devices. The trend of miniaturization in optoelectronics has forced the feature sizes of the electronic components to shrink accordingly. Therefore, atomically thin InSe crystals may play an important role in future optoelectronics. Given the instability and ultralow photoluminescent (PL) emission of mechanically exfoliated ultrathin InSe, synthesis of highly stable mono- and few-layer InSe nanosheets with high PL efficiency has become crucial. Herein, ultrathin InSe nanosheets were prepared via thermal annealing of electrochemically intercalated products from bulk InSe. The size and yield of the as-prepared nanosheets were up to ∼160 μm and ∼70%, respectively, and ∼80% of the nanosheets were less than five layer. Impressively, the as-prepared nanosheets showed greatly enhanced stability and PL emission because of surface modification by carbon species. Efficient photoresponsivity of 2 A/W was achieved in the as-prepared nanosheet-based devices. These nanosheets were further assembled into large-area thin films with photoresponsivity of 16 A/W and an average Hall mobility of about 5 cm2 V-1 s-1. Finally, one-dimensional (1D) InSe nanoscrolls with a length up to 90 μm were constructed by solvent-assisted self-assembly of the exfoliated nanosheets.

indium selenide large area optoelectronics photoluminescence ultrathin

SCI ; EI

英语

NI论文

其他

Shenzhen Peacock Plan[KQTD2016053112042971] ; Educational Commission of Guangdong Province[2016KCXTD006] ; Science and Technology Planning Project of Guangdong Province[2016B050501005] ; National Natural Science Foundation of China[11974156] ; Guangdong International Science Collaboration Project[2019A050510001]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000576958900027

AMER CHEMICAL SOC

20204309399430

Film preparation ; Optoelectronic devices ; Photoluminescence ; Selenium compounds ; Energy gap ; Hall mobility ; Indium compounds

Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Nanotechnology:761 ; Solid State Physics:933 ; Electronic Structure of Solids:933.3

2-s2.0-85091564799

Scopus

1.International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology,Shenzhen University,Shenzhen,518060,China
2.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
3.Department of Applied Physics,Hong Kong Polytechnic University,Hong Kong,999077,China

Hao，Qiaoyan,Liu，Jidong,Wang，Gang,et al. Surface-Modified Ultrathin InSe Nanosheets with Enhanced Stability and Photoluminescence for High-Performance Optoelectronics[J]. ACS Nano,2020,14(9):11373-11382.

Hao，Qiaoyan.,Liu，Jidong.,Wang，Gang.,Chen，Jiewei.,Gan，Haibo.,...&Zhang，Wenjing.(2020).Surface-Modified Ultrathin InSe Nanosheets with Enhanced Stability and Photoluminescence for High-Performance Optoelectronics.ACS Nano,14(9),11373-11382.

Hao，Qiaoyan,et al."Surface-Modified Ultrathin InSe Nanosheets with Enhanced Stability and Photoluminescence for High-Performance Optoelectronics".ACS Nano 14.9(2020):11373-11382.