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题名

Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure

作者
发表日期
2020-09-22
DOI
发表期刊
ISSN
1936-0851
EISSN
1936-086X
卷号14期号:9页码:12037-12044
摘要

The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS3/Fe3GeTe2 when the temperature is below the Neel temperature of MnPS3. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS3/Fe3GeTe2 heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe3GeTe2 during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.

关键词
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI论文
学校署名
其他
资助项目
National Key Research and Development Program of China[2017YFA0402902]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000615915300010
出版者
EI入藏号
20204409427068
EI主题词
Antiferromagnetism ; Tellurium compounds ; Manganese compounds ; Exchange coupling ; Van der Waals forces ; Germanium compounds ; Iron compounds
EI分类号
Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3
Scopus记录号
2-s2.0-85091561908
来源库
Scopus
引用统计
被引频次[WOS]:60
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/187903
专题前沿与交叉科学研究院
工学院_材料科学与工程系
作者单位
1.Hefei National Research Center for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei,230026,China
2.Department of Materials Science & Engineering,CAS Key Lab of Materials for Energy Conversion,University of Science and Technology of China,Hefei,230026,China
3.SUSTech Academy for Advanced Interdisciplinary Studies,Southern University of Science and Technology of China,Shenzhen,518055,China
4.Department of Materials Science and Engineering,Southern University of Science and Technology of China,Shenzhen,518055,China
5.Department of Materials Science and Engineering,National Tsing Hua University,Hsinchu,30013,Taiwan
6.Frontier Research Center on Fundamental and Applied Sciences of Matters,National Tsing Hua University,Hsinchu,30013,Taiwan
7.Department of Physics,University of Science and Technology of China,Hefei,230026,China
8.Anhui Laboratory of Advanced Photon Science and Technology,University of Science and Technology of China,Hefei,230026,China
9.Department of Physics,National Sun Yat-Sen University,Kaohsiung,80424,Taiwan
10.Department of Physics,National Tsing Hua University,Hsinchu,30013,Taiwan
11.Physics Division,National Center for Theoretical Sciences,Hsinchu,30013,Taiwan
推荐引用方式
GB/T 7714
Hu,Guojing,Zhu,Yuanmin,Xiang,Junxiang,et al. Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure[J]. ACS Nano,2020,14(9):12037-12044.
APA
Hu,Guojing.,Zhu,Yuanmin.,Xiang,Junxiang.,Yang,Tzu Yi.,Huang,Meng.,...&Chueh,Yu Lun.(2020).Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure.ACS Nano,14(9),12037-12044.
MLA
Hu,Guojing,et al."Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure".ACS Nano 14.9(2020):12037-12044.
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