E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability

in this work, we investigate the gate reliability of E-mode ${p-n}$ junction gate (PNJ) HEMT, which features an n GaN/p-GaN/AlGaN/GaN gate stack. Both electric-field and thermal-accelerated time-dependent gate breakdown (TDGB) tests were conducted on the PNJ-HEMTs with constant voltage stress (CVS). Compared with the Schottky-junction p-GaN gate HEMT (SJ-HEMT), the PNJ-HEMT delivers lower gate leakage, larger gate swing and longer TDDB lifetime. The estimated maximum applicable $V _{\mathbf{GS}}$ of PNJ-HEMT is 10 V for 10 years' lifetime at 63% failure level.