2D Bi2Se3 van der waals epitaxy on mica for optoelectronics applications

Wang，Shifeng1,2; Li，Yong1,2; Ng，Annie3; Hu，Qing4,5; Zhou，Qianyu1; Li，Xin1; Liu，Hao1

2020-09-01

10.3390/nano10091653

Nanomaterials   影响因子和分区

2079-4991

2079-4991

BiSe possesses a two-dimensional layered rhombohedral crystal structure, where the quintuple layers (QLs) are covalently bonded within the layers but weakly held together by van der Waals forces between the adjacent QLs. It is also pointed out that BiSe is a topological insulator, making it a promising candidate for a wide range of electronic and optoelectronic applications. In this study, we investigate the growth of high-quality BiSe thin films on mica by the molecular beam epitaxy technique. The films exhibited a layered structure and highly c-axis-preferred growth orientation with an XRD rocking curve full-width at half-maximum (FWHM) of 0.088, clearly demonstrating excellent crystallinity for the BiSe deposited on the mica substrate. The growth mechanism was studied by using an interface model associated with the coincidence site lattice unit (CSLU) developed for van der Waals epitaxies. This high (001) texture favors electron transport in the material. Hall measurements revealed a mobility of 726 cm /(Vs) at room temperature and up to 1469 cm/(Vs) at 12 K. The results illustrate excellent electron mobility arising from the superior crystallinity of the films with significant implications for applications in conducting electrodes in optoelectronic devices on flexible substrates.

Bi2Se3 Mica Optoelectronics Transparent conductive electrode Two-dimensional materials Van der Waals epitaxy

SCI

英语

其他

Wuhan University of Technology-Tibet University Joint Innovation Fund[LZJ2020003]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000580677300001

MDPI

2-s2.0-85090534265

Scopus

1.Department of Physics,Innovation Laboratory of Materials for Energy and Environment Technologies,College of Science,Tibet University,Lhasa,850000,China
2.Institute of Oxygen Supply,Center of Tibetan Studies (Everest Research Institute),Tibet University,Lhasa,850000,China
3.Department of Electrical and Computer Engineering,Nazarbayev University,Nur-Sultan,010000,Kazakhstan
4.School of Environmental Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
5.Engineering Innovation Center of Southern University of Science and Technology,Beijing,100083,China

Wang，Shifeng,Li，Yong,Ng，Annie,et al. 2D Bi2Se3 van der waals epitaxy on mica for optoelectronics applications[J]. Nanomaterials,2020,10(9):1-11.

Wang，Shifeng.,Li，Yong.,Ng，Annie.,Hu，Qing.,Zhou，Qianyu.,...&Liu，Hao.(2020).2D Bi2Se3 van der waals epitaxy on mica for optoelectronics applications.Nanomaterials,10(9),1-11.

Wang，Shifeng,et al."2D Bi2Se3 van der waals epitaxy on mica for optoelectronics applications".Nanomaterials 10.9(2020):1-11.