题名 | Residual Stress Analysis and Structural Parameters Optimization of Corrugated Diaphragms Applied to MEMs Device |
作者 | |
通讯作者 | Sun,Chengliang; Yu,Hongyu |
DOI | |
发表日期 | 2020-04-01
|
会议名称 | 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
|
ISBN | 978-1-7281-2540-4
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会议录名称 | |
页码 | 1-4
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会议日期 | 6-21 April 2020
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会议地点 | Penang, Malaysia
|
摘要 | The residual stress of the corrugated diaphragm seriously affects the yield, service life and reliability of the cavity type MEMS device. Therefore, this paper studies the reduction of residual stress by optimizing the structural parameters of the corrugated diaphragm applied to MEMS devices. The test results are in agreement with the simulation results, indicating that the residual stress of the corrugated diaphragm has a positive linear relationship with the thickness of the diaphragm and the interval of the V-shaped grooves, and has a quadratic function relationship with the width of the v-groove. The simulation predicts that when the thickness of the corrugated diaphragm and the interval of the V-shaped groove are the smallest, and the width of the V-shaped groove is close to 9.67 μm, the residual stress of the corrugated film has a minimum, which are consistent with the test results. The results serve as a guide and reference for cavity type MEMS device design. |
关键词 | |
学校署名 | 第一
; 通讯
|
语种 | 英语
|
相关链接 | [Scopus记录] |
收录类别 | |
EI入藏号 | 20204109314612
|
EI主题词 | Residual stresses
; Stress analysis
; MEMS
; Structural optimization
|
EI分类号 | Electric Equipment:704.2
; Inorganic Compounds:804.2
; Optimization Techniques:921.5
; Materials Science:951
|
Scopus记录号 | 2-s2.0-85091963764
|
来源库 | Scopus
|
全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9117900 |
引用统计 |
被引频次[WOS]:4
|
成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/188003 |
专题 | 工学院_深港微电子学院 |
作者单位 | 1.School of Microelectronics,Southern University of Science and Technology,Shenzhen, Guangdong,518055,China 2.Institute of Technological Sciences,Wuhan University,Wuhan, Hubei,430072,China 3.Key Laboratory of the Third Generation Semiconductor,Southern University of Science and Technology,Shenzhen, Guangdong,518055,China |
第一作者单位 | 深港微电子学院 |
通讯作者单位 | 南方科技大学 |
第一作者的第一单位 | 深港微电子学院 |
推荐引用方式 GB/T 7714 |
Tang,Chuying,Wang,Liang,Cai,Yao,et al. Residual Stress Analysis and Structural Parameters Optimization of Corrugated Diaphragms Applied to MEMs Device[C],2020:1-4.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Residual stress anal(646KB) | -- | -- | 限制开放 | -- |
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