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题名

Effect and mechanism of encapsulation on aging characteristics of quantum-dot light-emitting diodes

作者
通讯作者Chen,Shuming
发表日期
2020
DOI
发表期刊
ISSN
1998-0124
EISSN
1998-0000
卷号14期号:1页码:320-327
摘要
The aging characteristics, e.g., the evolution of efficiency and luminance of quantum-dot light-emitting diodes (QLEDs) are greatly affected by the encapsulation. When encapsulated with ultraviolet curable resin, the efficiency is increased over time, a known phenomenon termed as positive aging which remains one of the unsolved mysteries. By developing a physical model and an analytical model, we identify that the efficiency improvement is mainly attributed to the suppression of hole leakage current that is resulted from the passivation of ZnMgO defects. When further encapsulated with desiccant, the positive aging effect vanishes. To fully take the advantage of positive aging, the desiccant is incorporated after the positive aging process is completed. With the new encapsulation method, the QLED exhibits a high external quantum efficiency of 20.19% and a half lifetime of 1,267 h at an initial luminance of 2,800 cd·m, which are improved by 1.4 and 6.0 folds, respectively, making it one of the best performing devices. Our work provides an in-depth and systematic understanding of the mechanism of positive aging and offers a practical encapsulation way for realizing efficient and stable QLEDs.[Figure not available: see fulltext.]
关键词
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
National Natural Science Foundation of China[61775090] ; Guangdong Natural Science Funds for Distinguished Young Scholars[2016A030306017] ; Guangdong Special Funds for Science and Technology Development[2017A050506001]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目
Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号
WOS:000574813800001
出版者
EI入藏号
20204109318444
EI主题词
Organic light emitting diodes (OLED) ; Nanocrystals ; Defects ; II-VI semiconductors ; Quantum efficiency ; Semiconductor quantum dots ; Luminance ; Driers (materials) ; Magnesium compounds
EI分类号
Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Agents and Basic Industrial Chemicals:803 ; Inorganic Compounds:804.2 ; Quantum Theory; Quantum Mechanics:931.4 ; Crystalline Solids:933.1 ; Materials Science:951
Scopus记录号
2-s2.0-85092025758
来源库
Scopus
引用统计
被引频次[WOS]:52
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/188018
专题工学院_电子与电气工程系
作者单位
1.Guangdong University Key Lab for Advanced Quantum Dot Displays and Lighting,Shenzhen Key Lab for Advanced Quantum Dot Displays and Lighting,and Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,Shenzhen,518055,China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系;  南方科技大学
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Chen,Zinan,Su,Qiang,Qin,Zhiyuan,et al. Effect and mechanism of encapsulation on aging characteristics of quantum-dot light-emitting diodes[J]. Nano Research,2020,14(1):320-327.
APA
Chen,Zinan,Su,Qiang,Qin,Zhiyuan,&Chen,Shuming.(2020).Effect and mechanism of encapsulation on aging characteristics of quantum-dot light-emitting diodes.Nano Research,14(1),320-327.
MLA
Chen,Zinan,et al."Effect and mechanism of encapsulation on aging characteristics of quantum-dot light-emitting diodes".Nano Research 14.1(2020):320-327.
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