南方科技大学知识苑(SUSTech KC): Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN

题名	Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN
作者	Fan, Meng-Ya 1; Jiang, Yang2,3,4 ; Yang, Gai-Ying2,3,4 ; Jiang, Yu-Long 1; Yu, Hong-Yu2,3,4
通讯作者	Jiang, Yu-Long; Yu, Hong-Yu
发表日期	2020-10
DOI	10.1109/LED.2020.3020232
发表期刊	IEEE Electron Device Letters 影响因子和分区
ISSN	1558-0563
卷号	41 期号:10页码:1484-1487
关键词	Ohmic contact TaAl alloy penetration non-recessed i-AlGaN/GaN
相关链接	[IEEE记录]
收录类别	SCI ; EI
学校署名	通讯
EI入藏号	20204209346687
EI主题词	Tantalum alloys ; Gallium alloys ; III-V semiconductors ; Two dimensional electron gas ; Ohmic contacts ; Annealing ; Binary alloys ; Electric contactors ; Semiconductor alloys ; Aluminum alloys
EI分类号	Heat Treatment Processes:537.1 ; Aluminum Alloys:541.2 ; Tantalum and Alloys:543.4 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Inorganic Compounds:804.2
ESI学科分类	ENGINEERING
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9181625
引用统计	被引频次[WOS]：7
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/201865
专题	工学院_深港微电子学院
作者单位	1.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China 2.Southern Univ Sci & Technol SUSTech, Sch Microelect, Shenzhen 518055, Peoples R China 3.SUSTech, GaN Device Engn Technol Res Ctr Guangdong, Shenzhen 518055, Peoples R China 4.SUSTech, Key Lab Generat Semicond 3, Shenzhen 518055, Peoples R China
通讯作者单位	深港微电子学院; 南方科技大学
推荐引用方式 GB/T 7714	Fan, Meng-Ya,Jiang, Yang,Yang, Gai-Ying,et al. Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN[J]. IEEE Electron Device Letters,2020,41(10):1484-1487.
APA	Fan, Meng-Ya,Jiang, Yang,Yang, Gai-Ying,Jiang, Yu-Long,&Yu, Hong-Yu.(2020).Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN.IEEE Electron Device Letters,41(10),1484-1487.
MLA	Fan, Meng-Ya,et al."Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN".IEEE Electron Device Letters 41.10(2020):1484-1487.