A novel integrated structure of GaN embedded module

The application of wide band gap semiconductor is becoming more and more mature, the corresponding packaging method has also become a new hotspot. In this paper, a novel integrated package of gallium nitride (GaN) module is presented. This package form is based on a board-level embedded packaging process and traditional wire-bonding packaging process. First, the structure design of GaN module is described. And then, the entire manufacturing process of this module is introduced. Besides, based on the structure of embedded GaN die in the substrate, the corresponding thermal simulation is carried out. And from the simulation results, we can know that this structure has lower thermal resistance which is benefit for the use of this module. Finally, the GaN module is produced successfully, it can prove that the feasibility of the process design.