Plasma-based isotropic etching polishing of synthetic quartz

Li，Rulin1; Zhang，Yongjie1; Zhang，Yi1; Liu，Wang1; Li，Yaguo2; Deng，Hui1

2020-12-01

10.1016/j.jmapro.2020.10.075

Journal of Manufacturing Processes   影响因子和分区

1526-6125

2212-4616

To efficiently eliminate the surface defects and subsurface damage layer of synthetic quartz introduced by grinding, a plasma-based isotropic etching polishing (plasma-IEP) technique is proposed in this study. The smoothing of synthetic quartz by plasma-IEP is attributed to the formation, overlapping and merging of numerous and ultra-smooth etch pits formed by isotropic etching of SiO using inductively coupled plasma. Plasma diagnostics have revealed the existence of large amounts of etching radicals. The input radio frequency power and CF flow rate have been proved to be the two determinant factors of the material removal rate (MRR) of plasma-IEP. Under the optimized conditions, a maximum MRR of 5.62 μm/min of a 2-inch wafer has been achieved which is much higher than that of the conventional CMP process. After plasma-IEP for 30 min, the Sa roughness of the ground synthetic quartz decreases from 270.6 nm to 17.4 nm and the inner surface of the isotropic etch pits is smooth at the atomic level. The results presented in this paper demonstrate that plasma-IEP is a promising approach for the highly efficient and damage-free semi-finishing of synthetic quartz.

Inductively coupled plasma Isotropic etching polishing Polishing Roughness Synthetic quartz

SCI ; EI

英语

第一

National Natural Science Foundation of China[52035009][52005243] ; research fund for International Cooperation from the Science and Technology Innovation Committee of Shenzhen Municipality[GJHZ20180928155412525] ; Shenzhen High-level Innovation and Entrepreneurship Fund[KQTD20170810110250357]

Engineering

Engineering, Manufacturing

WOS:000595265000001

ELSEVIER SCI LTD

20204609483407

Polishing ; Etching ; Inductively coupled plasma ; Plasma diagnostics ; Surface roughness ; Surface defects

Minerals:482.2 ; Machining Operations:604.2 ; Chemical Reactions:802.2 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Plasma Physics:932.3 ; Materials Science:951

2-s2.0-85095776519

Scopus

1.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,No. 1088, Xueyuan Road,518055,China
2.Fine Optical Engineering Research Centre,Chengdu,610041,China

Li，Rulin,Zhang，Yongjie,Zhang，Yi,et al. Plasma-based isotropic etching polishing of synthetic quartz[J]. Journal of Manufacturing Processes,2020,60:447-456.

Li，Rulin,Zhang，Yongjie,Zhang，Yi,Liu，Wang,Li，Yaguo,&Deng，Hui.(2020).Plasma-based isotropic etching polishing of synthetic quartz.Journal of Manufacturing Processes,60,447-456.

Li，Rulin,et al."Plasma-based isotropic etching polishing of synthetic quartz".Journal of Manufacturing Processes 60(2020):447-456.